BSS63LT1G

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Mfr.Part #
BSS63LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 100V 0.1A SOT23-3
Stock
79
In Stock :
79

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Vce Saturation (Max) @ Ib, Ic :
250mV @ 2.5mA, 25mA
Number of Pins :
3
Max Power Dissipation :
225mW
Pin Count :
3
Max Collector Current :
100mA
Length :
3.04mm
Packaging :
Tape and Reel (TR)
Radiation Hardening :
No
Halogen Free :
Halogen Free
Factory Lead Time :
7 Weeks
Lead Free :
Lead Free
Emitter Base Voltage (VEBO) :
6V
Time@Peak Reflow Temperature-Max (s) :
40
Base Part Number :
BSS63
Number of Elements :
1
Surface Mount :
yes
Transistor Element Material :
SILICON
Polarity/Channel Type :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transition Frequency :
95MHz
Operating Temperature :
-55°C~150°C TJ
Collector Emitter Saturation Voltage :
-250mV
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Collector Emitter Breakdown Voltage :
100V
Package / Case :
TO-236-3, SC-59, SOT-23-3
Number of Terminations :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 25mA 1V
Max Breakdown Voltage :
100V
Published :
2005
Power Dissipation :
300mW
Mounting Type :
Surface Mount
ECCN Code :
EAR99
hFE Min :
30
Power - Max :
225mW
Current - Collector Cutoff (Max) :
100nA ICBO
Terminal Form :
Gull wing
Transistor Type :
PNP
Current Rating :
-100mA
Width :
1.4mm
Collector Base Voltage (VCBO) :
110V
REACH SVHC :
No SVHC
Peak Reflow Temperature (Cel) :
260
Gain Bandwidth Product :
95MHz
Collector Emitter Voltage (VCEO) :
100V
Contact Plating :
Tin
Frequency :
95MHz
Height :
1.11mm
Pbfree Code :
yes
Terminal Position :
Dual
Voltage - Rated DC :
-100V
JESD-609 Code :
e3
Element Configuration :
Single
Introducing Transistors - Bipolar (BJT) - Single onsemi BSS63LT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:BSS63, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, Mounting Type:Surface Mount, BSS63LT1G pinout, BSS63LT1G datasheet PDF, BSS63LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BSS63LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BSS63LT1G


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BSS63LT1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 25mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 2.5mA, 25mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 95MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

BSS63LT1G Features


the DC current gain for this device is 30 @ 25mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 2.5mA, 25mA
the emitter base voltage is kept at 6V
the current rating of this device is -100mA
a transition frequency of 95MHz


BSS63LT1G Applications


There are a lot of ON Semiconductor
BSS63LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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