BSS63,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

Dual

Element Configuration :

Single

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Published :

2006

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

100V

Max Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Series :

Automotive, AEC-Q101

ECCN Code :

EAR99

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

6V

Number of Terminations :

3

Power Dissipation :

250mW

Collector Base Voltage (VCBO) :

110V

hFE Min :

30

Radiation Hardening :

No

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Emitter Voltage (VCEO) :

100V

Number of Elements :

1

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 2.5mA, 25mA

Base Part Number :

BSS63

Transistor Application :

SWITCHING

Pin Count :

3

Max Breakdown Voltage :

100V

Contact Plating :

Tin

Gain Bandwidth Product :

85MHz

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 25mA 1V

Current - Collector Cutoff (Max) :

100nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

250mW

Time@Peak Reflow Temperature-Max (s) :

30

Frequency :

85MHz

Transistor Type :

PNP

Polarity/Channel Type :

PNP

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Transition Frequency :

85MHz

Terminal Form :

Gull wing

Operating Temperature :

150°C TJ

Factory Lead Time :

4 Weeks