BSS63,215
- Mfr.Part #
- BSS63,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 0.1A TO236AB
- Stock
- 3,096
- In Stock :
- 3,096
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 250mW
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Series :
- Automotive, AEC-Q101
- Collector Emitter Breakdown Voltage :
- 100V
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 2.5mA, 25mA
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 25mA 1V
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Base Voltage (VCBO) :
- 110V
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Base Part Number :
- BSS63
- JESD-609 Code :
- e3
- Frequency :
- 85MHz
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 250mW
- Gain Bandwidth Product :
- 85MHz
- Published :
- 2006
- Radiation Hardening :
- No
- Transition Frequency :
- 85MHz
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- hFE Min :
- 30
- Datasheets
- BSS63,215
BSS63,215 Documents

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSS63,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 25mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 85MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 100mA volts.
BSS63,215 Features
the DC current gain for this device is 30 @ 25mA 1V
the vce saturation(Max) is 250mV @ 2.5mA, 25mA
the emitter base voltage is kept at 6V
a transition frequency of 85MHz
BSS63,215 Applications
There are a lot of Nexperia USA Inc.
BSS63,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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