BSS63,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Number of Elements :

1

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Power Dissipation :

250mW

Mount :

Surface Mount

Max Breakdown Voltage :

100V

Current - Collector Cutoff (Max) :

100nA ICBO

Series :

Automotive, AEC-Q101

Collector Emitter Breakdown Voltage :

100V

Contact Plating :

Tin

Vce Saturation (Max) @ Ib, Ic :

250mV @ 2.5mA, 25mA

Element Configuration :

Single

REACH SVHC :

No SVHC

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 25mA 1V

Collector Emitter Voltage (VCEO) :

100V

Collector Base Voltage (VCBO) :

110V

Operating Temperature :

150°C TJ

Max Collector Current :

100mA

Number of Terminations :

3

Polarity/Channel Type :

PNP

Number of Pins :

3

Terminal Form :

Gull wing

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

6V

Base Part Number :

BSS63

JESD-609 Code :

e3

Frequency :

85MHz

Packaging :

Tape and Reel (TR)

Power Dissipation :

250mW

Gain Bandwidth Product :

85MHz

Published :

2006

Radiation Hardening :

No

Transition Frequency :

85MHz

Transistor Type :

PNP

ECCN Code :

EAR99

hFE Min :

30