BSS63,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Base Part Number :

BSS63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Polarity/Channel Type :

PNP

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

100V

Transistor Type :

PNP

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Emitter Base Voltage (VEBO) :

6V

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks

Mount :

Surface Mount

Gain Bandwidth Product :

85MHz

Frequency :

85MHz

hFE Min :

30

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

110V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Max Breakdown Voltage :

100V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Max Collector Current :

100mA

Published :

2006

Max Power Dissipation :

250mW

Pin Count :

3

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 25mA 1V

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

150°C TJ

Power Dissipation :

250mW

Number of Elements :

1

Series :

Automotive, AEC-Q101

REACH SVHC :

No SVHC

Transition Frequency :

85MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Contact Plating :

Tin

Vce Saturation (Max) @ Ib, Ic :

250mV @ 2.5mA, 25mA

Collector Emitter Voltage (VCEO) :

100V