BSS64AHZGT116
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- Mfr.Part #
- BSS64AHZGT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.1A SST3
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- JESD-30 Code :
- R-PDSO-G3
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Current - Collector (Ic) (Max) :
- 100mA
- Power - Max :
- 200mW
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Surface Mount :
- yes
- Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 25mA 1V
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Reach Compliance Code :
- not_compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 140MHz
- Mounting Type :
- Surface Mount
- Series :
- Automotive, AEC-Q101
- Frequency - Transition :
- 140MHz
- Datasheets
- BSS64AHZGT116
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSS64AHZGT116 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 25mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.Parts of this part have transition frequencies of 140MHz.This device displays a 100V maximum voltage - Collector Emitter Breakdown.
BSS64AHZGT116 Features
the DC current gain for this device is 30 @ 25mA 1V
the vce saturation(Max) is 300mV @ 10mA, 100mA
a transition frequency of 140MHz
BSS64AHZGT116 Applications
There are a lot of ROHM Semiconductor
BSS64AHZGT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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