BSS64AT116
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- Mfr.Part #
- BSS64AT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.1A SST3
- Stock
- 56
- In Stock ：
- 56
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 13 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 25mA 1V
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Power - Max :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency - Transition :
- 140MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Datasheets
- BSS64AT116
NPN 150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSS64AT116 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 25mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 10mA, 100mA.Device displays Collector Emitter Breakdown (100V maximal voltage).
BSS64AT116 Features
the DC current gain for this device is 30 @ 25mA 1V
the vce saturation(Max) is 300mV @ 10mA, 100mA
BSS64AT116 Applications
There are a lot of ROHM Semiconductor
BSS64AT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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