BSS63,215
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- Mfr.Part #
- BSS63,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 100MA SOT23
- Stock
- 3,096
- In Stock ：
- 3,096
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Emitter Base Voltage (VEBO) :
- 6V
- Lead Free :
- Lead Free
- Power Dissipation :
- 250mW
- Pin Count :
- 3
- Transition Frequency :
- 85MHz
- Collector Emitter Voltage (VCEO) :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 100V
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Series :
- Automotive, AEC-Q101
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e3
- Published :
- 2006
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 2.5mA, 25mA
- Base Part Number :
- BSS63
- Max Power Dissipation :
- 250mW
- Number of Pins :
- 3
- Frequency :
- 85MHz
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 100mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 110V
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 100V
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 85MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 25mA 1V
- hFE Min :
- 30
- Datasheets
- BSS63,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSS63,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 25mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 85MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 100mA volts.
BSS63,215 Features
the DC current gain for this device is 30 @ 25mA 1V
the vce saturation(Max) is 250mV @ 2.5mA, 25mA
the emitter base voltage is kept at 6V
a transition frequency of 85MHz
BSS63,215 Applications
There are a lot of Nexperia USA Inc.
BSS63,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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