BSS63,215
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- Mfr.Part #
- BSS63,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 100MA SOT23
- Stock
- 3,096
- In Stock ：
- 3,096
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Collector Emitter Breakdown Voltage :
- 100V
- Lead Free :
- Lead Free
- Frequency :
- 85MHz
- Transition Frequency :
- 85MHz
- Max Breakdown Voltage :
- 100V
- Base Part Number :
- BSS63
- Collector Base Voltage (VCBO) :
- 110V
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 2.5mA, 25mA
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Published :
- 2006
- Max Collector Current :
- 100mA
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Gain Bandwidth Product :
- 85MHz
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 100V
- Element Configuration :
- Single
- Number of Pins :
- 3
- hFE Min :
- 30
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 250mW
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 25mA 1V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 250mW
- Transistor Type :
- PNP
- Datasheets
- BSS63,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSS63,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 25mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 85MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 100mA volts.
BSS63,215 Features
the DC current gain for this device is 30 @ 25mA 1V
the vce saturation(Max) is 250mV @ 2.5mA, 25mA
the emitter base voltage is kept at 6V
a transition frequency of 85MHz
BSS63,215 Applications
There are a lot of Nexperia USA Inc.
BSS63,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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