BSS63,215
- Mfr.Part #
- BSS63,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 100MA SOT23
- Stock
- 3,096
- In Stock :
- 3,096
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Factory Lead Time :
- 4 Weeks
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 2.5mA, 25mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 85MHz
- Max Power Dissipation :
- 250mW
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 250mW
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 6V
- Frequency :
- 85MHz
- Max Breakdown Voltage :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- hFE Min :
- 30
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 110V
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 85MHz
- Transistor Element Material :
- SILICON
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 25mA 1V
- Element Configuration :
- Single
- Base Part Number :
- BSS63
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Series :
- Automotive, AEC-Q101
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 100mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- BSS63,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSS63,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 25mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 85MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 100mA volts.
BSS63,215 Features
the DC current gain for this device is 30 @ 25mA 1V
the vce saturation(Max) is 250mV @ 2.5mA, 25mA
the emitter base voltage is kept at 6V
a transition frequency of 85MHz
BSS63,215 Applications
There are a lot of Nexperia USA Inc.
BSS63,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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