BSS63,215

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Mfr.Part #
BSS63,215
Manufacturer
NXP Semiconductors
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 100V 100MA SOT23
Stock
3,096
In Stock :
3,096

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Manufacturer :
NXP Semiconductors
Product Category :
Unclassified
Collector Emitter Breakdown Voltage :
100V
Lead Free :
Lead Free
Frequency :
85MHz
Transition Frequency :
85MHz
Max Breakdown Voltage :
100V
Base Part Number :
BSS63
Collector Base Voltage (VCBO) :
110V
Number of Elements :
1
REACH SVHC :
No SVHC
Contact Plating :
Tin
Time@Peak Reflow Temperature-Max (s) :
30
Radiation Hardening :
No
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
Number of Terminations :
3
Terminal Position :
Dual
Vce Saturation (Max) @ Ib, Ic :
250mV @ 2.5mA, 25mA
Operating Temperature :
150°C TJ
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Published :
2006
Max Collector Current :
100mA
JESD-609 Code :
e3
Terminal Form :
Gull wing
Pin Count :
3
Gain Bandwidth Product :
85MHz
Packaging :
Tape and Reel (TR)
Emitter Base Voltage (VEBO) :
6V
ECCN Code :
EAR99
Collector Emitter Voltage (VCEO) :
100V
Element Configuration :
Single
Number of Pins :
3
hFE Min :
30
Factory Lead Time :
4 Weeks
Current - Collector Cutoff (Max) :
100nA ICBO
Series :
Automotive, AEC-Q101
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
250mW
Polarity/Channel Type :
PNP
Peak Reflow Temperature (Cel) :
260
Mount :
Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 25mA 1V
Package / Case :
TO-236-3, SC-59, SOT-23-3
Max Power Dissipation :
250mW
Transistor Type :
PNP
Datasheets
BSS63,215
Introducing Unclassified NXP Semiconductors BSS63,215 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BSS63, Mounting Type:Surface Mount, Number of Terminations:3, Operating Temperature:150°C TJ, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, BSS63,215 pinout, BSS63,215 datasheet PDF, BSS63,215 amp .Beyond Unclassified NXP Semiconductors BSS63,215 ,we also offer 5801925, F-631, 47480-0001, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BSS63,215 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 25mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 85MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 100mA volts.

BSS63,215 Features


the DC current gain for this device is 30 @ 25mA 1V
the vce saturation(Max) is 250mV @ 2.5mA, 25mA
the emitter base voltage is kept at 6V
a transition frequency of 85MHz


BSS63,215 Applications


There are a lot of Nexperia USA Inc.
BSS63,215 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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