BSS63-QR
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- Mfr.Part #
- BSS63-QR
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 0.1A TO236AB
- Stock
- 24,750
- In Stock ：
- 24,750
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 25mA, 1V
- Current - Collector (Ic) (Max) :
- 100 mA
- Packaging :
- MouseReel
- Product Category :
- Nexperia
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 85MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Supplier Device Package :
- TO-236AB
- Package :
- Tape and Reel (TR)
- Manufacturer :
- Nexperia
- Brand :
- Nexperia
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 2.5mA, 25mA
- Product Status :
- Active
- Operating Temperature :
- 150°C (TJ)
- Series :
- Automotive, AEC-Q101
- RoHS :
- Details
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Power - Max :
- 250 mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- PNP
- Datasheets
- BSS63-QR
PNP 150°C (TJ) 100nA (ICBO) TO-236-3, SC-59, SOT-23-3 MouseReel Surface Mount
BSS63-QR Overview
In this device, the DC current gain is 30 @ 25mA, 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 2.5mA, 25mA.Product comes in the supplier's device package TO-236AB.There is a 100 V maximal voltage in the device due to collector-emitter breakdown.
BSS63-QR Features
the DC current gain for this device is 30 @ 25mA, 1V
the vce saturation(Max) is 250mV @ 2.5mA, 25mA
the supplier device package of TO-236AB
BSS63-QR Applications
There are a lot of Nexperia USA Inc.
BSS63-QR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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