BSS63AT116

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Mfr.Part #
BSS63AT116
Manufacturer
ROHM Semiconductor
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 100V 0.1A SST3
Stock
3,000
In Stock :
3,000

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
100nA ICBO
Polarity/Channel Type :
PNP
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 25mA 1V
Transistor Type :
PNP
Operating Temperature :
150°C TJ
Configuration :
Single
Transition Frequency :
200MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
500mV @ 10mA, 100mA
Packaging :
Tape and Reel (TR)
Number of Elements :
1
Package / Case :
TO-236-3, SC-59, SOT-23-3
RoHS Status :
ROHS3 Compliant
Terminal Form :
Gull wing
Voltage - Collector Emitter Breakdown (Max) :
100V
Frequency - Transition :
200MHz
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-30 Code :
R-PDSO-G3
Reach Compliance Code :
not_compliant
Current - Collector (Ic) (Max) :
100mA
Number of Terminations :
3
Terminal Position :
Dual
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
13 Weeks
Transistor Application :
AMPLIFIER
Surface Mount :
yes
Mounting Type :
Surface Mount
Power - Max :
200mW
Datasheets
BSS63AT116
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor BSS63AT116 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, Mounting Type:Surface Mount, BSS63AT116 pinout, BSS63AT116 datasheet PDF, BSS63AT116 amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor BSS63AT116 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor BSS63AT116


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BSS63AT116 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 25mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 10mA, 100mA.A transition frequency of 200MHz is present in the part.A 100V maximal voltage - Collector Emitter Breakdown is present in the device.

BSS63AT116 Features


the DC current gain for this device is 30 @ 25mA 1V
the vce saturation(Max) is 500mV @ 10mA, 100mA
a transition frequency of 200MHz


BSS63AT116 Applications


There are a lot of ROHM Semiconductor
BSS63AT116 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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