BSS64,215
- Mfr.Part #
- BSS64,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.1A TO236AB
- Stock
- 2,555
- In Stock :
- 2,555
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Turn Off Time-Max (toff) :
- 1000ns
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Surface Mount :
- yes
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 10mA 1V
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Base Part Number :
- BSS64
- Transition Frequency :
- 100MHz
- JEDEC-95 Code :
- TO-236AB
- Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- VCEsat-Max :
- 0.2 V
- Published :
- 2009
- HTS Code :
- 8541.21.00.95
- Number of Elements :
- 1
- JESD-30 Code :
- R-PDSO-G3
- Current - Collector (Ic) (Max) :
- 100mA
- ECCN Code :
- EAR99
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Frequency - Transition :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 15mA, 50mA
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Series :
- Automotive, AEC-Q101
- Power - Max :
- 250mW
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BSS64,215

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSS64,215 Overview
In this device, the DC current gain is 20 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 15mA, 50mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 80V.
BSS64,215 Features
the DC current gain for this device is 20 @ 10mA 1V
the vce saturation(Max) is 200mV @ 15mA, 50mA
a transition frequency of 100MHz
BSS64,215 Applications
There are a lot of Nexperia USA Inc.
BSS64,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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