SIA917DJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

110m Ω @ 2.5A, 4.5V

Resistance :

110mOhm

Current - Continuous Drain (Id) @ 25°C :

4.5A

Published :

2016

Series :

TrenchFET®

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Case Connection :

DRAIN

Turn-Off Delay Time :

15 ns

Drain to Source Voltage (Vdss) :

20V

REACH SVHC :

Unknown

Nominal Vgs :

-1 V

FET Type :

2 P-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

3.3A

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 10V

Package / Case :

PowerPAK® SC-70-6 Dual

Threshold Voltage :

-1V

Fall Time (Typ) :

10 ns

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Breakdown Voltage :

-20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Base Part Number :

SIA917

Turn On Delay Time :

20 ns

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Max Power Dissipation :

6.5W

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Number of Terminations :

6

Continuous Drain Current (ID) :

-4.5A

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

12V

Pin Count :

6

Pulsed Drain Current-Max (IDM) :

10A

Rise Time :

45ns

Number of Pins :

6