SIA913DJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn On Delay Time :

15 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 6V

Current - Continuous Drain (Id) @ 25°C :

4.5A

REACH SVHC :

Unknown

Mount :

Surface Mount

FET Feature :

Standard

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Supplier Device Package :

PowerPAK® SC-70-6 Dual

Continuous Drain Current (ID) :

-4.5A

Resistance :

70mOhm

Published :

2009

Package / Case :

PowerPAK® SC-70-6 Dual

Rise Time :

25ns

Base Part Number :

SIA913

Number of Pins :

6

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Breakdown Voltage :

12V

Drain to Source Resistance :

70mOhm

Min Operating Temperature :

-55°C

Power - Max :

6.5W

Max Power Dissipation :

1.9W

Gate to Source Voltage (Vgs) :

8V

Fall Time (Typ) :

10 ns

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

70mOhm @ 3.3A, 4.5V

Turn-Off Delay Time :

20 ns

Drain to Source Voltage (Vdss) :

12V

Rds On Max :

70 mΩ

Threshold Voltage :

-1V

Nominal Vgs :

-1 V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 8V

Series :

TrenchFET®

Power Dissipation :

1.9W

Radiation Hardening :

No

Input Capacitance :

400pF

FET Type :

2 P-Channel (Dual)