SIA914DJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

30 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Number of Pins :

6

Drain to Source Voltage (Vdss) :

20V

Power Dissipation :

1.9W

Fall Time (Typ) :

53 ns

REACH SVHC :

Unknown

Gate to Source Voltage (Vgs) :

8V

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 10V

Number of Elements :

2

Published :

2016

Turn On Delay Time :

5 ns

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Base Part Number :

SIA914

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

Rise Time :

32ns

Radiation Hardening :

No

Mounting Type :

Surface Mount

Case Connection :

DRAIN

FET Feature :

Logic Level Gate

Package / Case :

PowerPAK® SC-70-6 Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

11.5nC @ 8V

Resistance :

53mOhm

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Nominal Vgs :

1 V

Rds On (Max) @ Id, Vgs :

53m Ω @ 3.7A, 4.5V

Max Power Dissipation :

6.5W

Number of Terminations :

6

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

4.5A

Threshold Voltage :

1V

Drain to Source Breakdown Voltage :

20V

Mount :

Surface Mount