SIA910EDJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Resistance :

28mOhm

Base Part Number :

SIA910E

Continuous Drain Current (ID) :

4.5A

ECCN Code :

EAR99

Element Configuration :

Dual

JESD-609 Code :

e3

Mount :

Surface Mount

Package / Case :

PowerPAK® SC-70-6 Dual

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Threshold Voltage :

400mV

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

8V

Lead Free :

Lead Free

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

12V

Turn On Delay Time :

10 ns

Radiation Hardening :

No

Turn-Off Delay Time :

25 ns

Number of Channels :

2

Rise Time :

12ns

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Max Power Dissipation :

7.8W

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.9W

Case Connection :

DRAIN

Fall Time (Typ) :

12 ns

REACH SVHC :

Unknown

Factory Lead Time :

14 Weeks

Vgs(th) (Max) @ Id :

1V @ 250μA

Series :

TrenchFET®

Operating Mode :

ENHANCEMENT MODE

Published :

2015

FET Feature :

Logic Level Gate

Nominal Vgs :

400 mV

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

28m Ω @ 5.2A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 8V

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Number of Elements :

2

Number of Terminations :

6

Input Capacitance (Ciss) (Max) @ Vds :

455pF @ 6V

Transistor Element Material :

SILICON

Weight :

28.009329mg

Drain to Source Voltage (Vdss) :

12V