SIA907EDJT-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Series :

TrenchFET®

Rise Time :

10ns

FET Type :

2 P-Channel (Dual)

Continuous Drain Current (ID) :

4.5A

Rds On (Max) @ Id, Vgs :

57m Ω @ 3.6A, 4.5V

Turn-Off Delay Time :

30 ns

Number of Terminations :

6

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Power Dissipation :

1.9W

Resistance :

57mOhm

FET Feature :

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Weight :

28.009329mg

Published :

2016

Fall Time (Typ) :

10 ns

ECCN Code :

EAR99

Number of Pins :

6

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Gate to Source Voltage (Vgs) :

12V

Max Power Dissipation :

7.8W

Package / Case :

PowerPAK® SC-70-6 Dual

Pin Count :

6

Drain to Source Breakdown Voltage :

-20V

Turn On Delay Time :

5 ns

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Lead Free :

Contains Lead