SIA912DJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Turn On Delay Time :

5 ns

Rise Time :

15ns

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.9W

Drain to Source Breakdown Voltage :

12V

Max Power Dissipation :

1.9W

Series :

TrenchFET®

Package / Case :

PowerPAK® SC-70-6 Dual

Resistance :

40mOhm

Published :

2014

Power - Max :

6.5W

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Number of Terminations :

6

Radiation Hardening :

No

Base Part Number :

SIA912

Turn-Off Delay Time :

35 ns

Drain to Source Voltage (Vdss) :

12V

FET Feature :

Logic Level Gate

Case Connection :

DRAIN

REACH SVHC :

Unknown

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

4.5A

Fall Time (Typ) :

15 ns

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.2A, 4.5V

Threshold Voltage :

1V

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

11.5nC @ 8V

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 N-Channel (Dual)

Number of Pins :

6

Element Configuration :

Dual

Pin Count :

6

Transistor Element Material :

SILICON

Mount :

Surface Mount

Nominal Vgs :

1 V

Gate to Source Voltage (Vgs) :

8V

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 6V

Number of Elements :

2