SIA906EDJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Pin Count :

6

Rds On (Max) @ Id, Vgs :

46m Ω @ 3.9A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 10V

Drain to Source Breakdown Voltage :

20V

Element Configuration :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Resistance :

46mOhm

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Max Junction Temperature (Tj) :

150°C

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Qualification Status :

Not Qualified

Number of Pins :

6

FET Feature :

Logic Level Gate

Package / Case :

PowerPAK® SC-70-6 Dual

Fall Time (Typ) :

12 ns

Continuous Drain Current (ID) :

4.5A

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Published :

2015

Pbfree Code :

yes

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

20V

Packaging :

Tape and Reel (TR)

Width :

2.05mm

Weight :

28.009329mg

Factory Lead Time :

14 Weeks

Height :

850μm

JESD-609 Code :

e3

Turn-Off Delay Time :

15 ns

Contact Plating :

Tin

Max Power Dissipation :

7.8W

Number of Elements :

2

Manufacturer Package Identifier :

C-07431-DUAL

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Power Dissipation :

1.9W

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

12V

Case Connection :

DRAIN

Length :

2.05mm

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

12ns

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

6

Transistor Element Material :

SILICON

Terminal Form :

NO LEAD

Turn On Delay Time :

5 ns