SIA914ADJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

REACH SVHC :

Unknown

Turn On Delay Time :

7 ns

Drain-source On Resistance-Max :

0.043Ohm

Drain to Source Breakdown Voltage :

20V

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 10V

FET Type :

2 N-Channel (Dual)

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

900mV @ 250μA

Continuous Drain Current (ID) :

4.5A

Fall Time (Typ) :

5 ns

Max Power Dissipation :

7.8W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Rise Time :

20ns

Factory Lead Time :

15 Weeks

Power Dissipation :

1.9W

Case Connection :

DRAIN

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

8V

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

43m Ω @ 3.7A, 4.5V

Turn-Off Delay Time :

25 ns

Published :

2015

Gate Charge (Qg) (Max) @ Vgs :

12.5nC @ 8V

Package / Case :

PowerPAK® SC-70-6 Dual

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Number of Pins :

6

ECCN Code :

EAR99

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Transistor Application :

SWITCHING

Weight :

28.009329mg