SI7949DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Threshold Voltage :

-3V

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

8 ns

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-30 Code :

R-XDSO-C6

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

65 ns

Continuous Drain Current (ID) :

-5A

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

1.5W

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

60V

Package / Case :

PowerPAK® SO-8 Dual

Case Connection :

DRAIN

Factory Lead Time :

14 Weeks

Rds On (Max) @ Id, Vgs :

64m Ω @ 5A, 10V

Terminal Finish :

PURE MATTE TIN

Terminal Form :

C BEND

Packaging :

Tape and Reel (TR)

Base Part Number :

SI7949

Radiation Hardening :

No

Power Dissipation :

1.5W

Weight :

506.605978mg

Pbfree Code :

yes

ECCN Code :

EAR99

Rise Time :

9ns

REACH SVHC :

Unknown

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

3.2A

Drain to Source Breakdown Voltage :

-60V

Peak Reflow Temperature (Cel) :

260

FET Type :

2 P-Channel (Dual)

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2012

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Number of Pins :

8

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.064Ohm

Number of Terminations :

6

Fall Time (Typ) :

30 ns

Time@Peak Reflow Temperature-Max (s) :

30

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

20V