SI7900AEDN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2014

FET Type :

2 N-Channel (Dual) Common Drain

Power Dissipation :

1.5W

RoHS Status :

ROHS3 Compliant

Terminal Finish :

PURE MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

6A

Max Power Dissipation :

1.5W

Pin Count :

8

Base Part Number :

SI7900

Fall Time (Typ) :

1.3 μs

Rise Time :

1.3μs

JESD-30 Code :

S-XDSO-C5

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

6A

Number of Terminations :

5

Vgs(th) (Max) @ Id :

900mV @ 250μA

Pbfree Code :

yes

JESD-609 Code :

e3

Number of Pins :

8

Package / Case :

PowerPAK® 1212-8 Dual

Pulsed Drain Current-Max (IDM) :

30A

Series :

TrenchFET®

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

26m Ω @ 8.5A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

14 Weeks

Terminal Form :

C BEND

Transistor Application :

SWITCHING

Mount :

Surface Mount

Turn-Off Delay Time :

8.6 μs

Turn On Delay Time :

850 ns

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

12V

Drain to Source Voltage (Vdss) :

20V

ECCN Code :

EAR99

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30