SI7911DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

35ns

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Package / Case :

PowerPAK® 1212-8 Dual

Packaging :

Cut Tape (CT)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

8V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.051Ohm

Turn On Delay Time :

20 ns

Series :

TrenchFET®

Number of Terminations :

6

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

-5.7A

Terminal Form :

C BEND

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

51m Ω @ 5.7A, 4.5V

Transistor Application :

SWITCHING

Element Configuration :

Dual

Current - Continuous Drain (Id) @ 25°C :

4.2A

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

S-XDSO-C6

Case Connection :

DRAIN

Min Operating Temperature :

-55°C

Number of Elements :

2

FET Feature :

Logic Level Gate

Radiation Hardening :

No

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

1.3W

Max Power Dissipation :

1.3W

Turn-Off Delay Time :

70 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Published :

2011

JESD-609 Code :

e3

Fall Time (Typ) :

35 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

FET Type :

2 P-Channel (Dual)

Pbfree Code :

yes

ECCN Code :

EAR99

Base Part Number :

SI7911