SI7905DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

60mOhm @ 5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 20V

Max Power Dissipation :

20.8W

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

Min Operating Temperature :

-50°C

FET Type :

2 P-Channel (Dual)

Rise Time :

13ns

Rds On Max :

60 mΩ

Published :

2015

Element Configuration :

Dual

Length :

3.05mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

5A

Fall Time (Typ) :

10 ns

Drain to Source Resistance :

60mOhm

FET Feature :

Standard

Drain to Source Voltage (Vdss) :

40V

Factory Lead Time :

15 Weeks

Height :

1.04mm

Package / Case :

PowerPAK® 1212-8 Dual

RoHS Status :

ROHS3 Compliant

Base Part Number :

SI7905

Turn On Delay Time :

6 ns

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

26 ns

Lead Free :

Lead Free

Resistance :

60mOhm

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Width :

3.05mm

Input Capacitance :

880pF

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

6A

Number of Pins :

8

Power - Max :

20.8W

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Series :

TrenchFET®

Number of Channels :

2

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

-40V

Mount :

Surface Mount

Supplier Device Package :

PowerPAK® 1212-8 Dual