SI7904BDN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

C BEND

Terminal Finish :

PURE MATTE TIN

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

1.04mm

Gate to Source Voltage (Vgs) :

8V

Fall Time (Typ) :

5 ns

Number of Pins :

8

Drain Current-Max (Abs) (ID) :

6A

Resistance :

30mOhm

Pin Count :

8

FET Type :

2 N-Channel (Dual)

Turn On Delay Time :

5 ns

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 8V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Turn-Off Delay Time :

25 ns

Radiation Hardening :

No

Element Configuration :

Dual

JESD-609 Code :

e3

Published :

2013

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

JESD-30 Code :

S-XDSO-C6

Transistor Application :

AMPLIFIER

Operating Mode :

ENHANCEMENT MODE

Width :

3.05mm

Base Part Number :

SI7904

Factory Lead Time :

14 Weeks

Rise Time :

15ns

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

17.8W

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 10V

Number of Terminations :

6

Lead Free :

Lead Free

Power Dissipation :

2.5W

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

30m Ω @ 7.1A, 4.5V

Vgs(th) (Max) @ Id :

1V @ 250μA

Package / Case :

PowerPAK® 1212-8 Dual

Continuous Drain Current (ID) :

6A

Case Connection :

DRAIN

Length :

3.05mm