SI7911DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn-Off Delay Time :

70 ns

Terminal Finish :

PURE MATTE TIN

Fall Time (Typ) :

40 ns

Element Configuration :

Dual

Series :

TrenchFET®

Mount :

Surface Mount

Base Part Number :

SI7911

Rise Time :

35ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

4.2A

Rds On (Max) @ Id, Vgs :

51m Ω @ 5.7A, 4.5V

Peak Reflow Temperature (Cel) :

260

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

-20V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Published :

2012

Gate to Source Voltage (Vgs) :

8V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.051Ohm

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

2 P-Channel (Dual)

ECCN Code :

EAR99

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Package / Case :

PowerPAK® 1212-8 Dual

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Terminal Form :

C BEND

Radiation Hardening :

No

Max Power Dissipation :

1.3W

JESD-30 Code :

S-XDSO-C6

Drain to Source Voltage (Vdss) :

20V

Number of Elements :

2

Turn On Delay Time :

20 ns

Number of Terminations :

6

Pin Count :

8

Pulsed Drain Current-Max (IDM) :

20A

Number of Pins :

8