SI7900AEDN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

5

Terminal Form :

C BEND

Length :

3.05mm

Pbfree Code :

yes

Package / Case :

PowerPAK® 1212-8 Dual

Factory Lead Time :

14 Weeks

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

6A

Turn On Delay Time :

850 ns

Transistor Element Material :

SILICON

Width :

3.05mm

Drain to Source Breakdown Voltage :

20V

Element Configuration :

Dual

Lead Free :

Lead Free

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

S-XDSO-C5

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

8.5A

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Vgs(th) (Max) @ Id :

900mV @ 250μA

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

6A

Published :

2015

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

12V

Max Power Dissipation :

1.5W

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Base Part Number :

SI7900

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Number of Elements :

2

Radiation Hardening :

No

FET Type :

2 N-Channel (Dual) Common Drain

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Rise Time :

1.3μs

Fall Time (Typ) :

1.3 μs

Power Dissipation :

1.5W

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

30A

Turn-Off Delay Time :

8.6 μs

Transistor Application :

SWITCHING

Height :

1.04mm

Rds On (Max) @ Id, Vgs :

26m Ω @ 8.5A, 4.5V