SI7913DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Power Dissipation :

1.3W

Published :

2009

Height :

1.04mm

Turn On Delay Time :

20 ns

Rds On (Max) @ Id, Vgs :

37m Ω @ 7.4A, 4.5V

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Terminal Form :

C BEND

Fall Time (Typ) :

70 ns

Width :

3.05mm

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Pin Count :

8

JESD-609 Code :

e3

FET Feature :

Logic Level Gate

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

72 ns

Factory Lead Time :

14 Weeks

Rise Time :

70ns

Continuous Drain Current (ID) :

-7.4A

Case Connection :

DRAIN

Length :

3.05mm

Number of Terminations :

6

Base Part Number :

SI7913

Current - Continuous Drain (Id) @ 25°C :

5A

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Element Configuration :

Dual

Gate to Source Voltage (Vgs) :

8V

Number of Elements :

2

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

-20V

JESD-30 Code :

S-XDSO-C6

Resistance :

37mOhm

Series :

TrenchFET®

Package / Case :

PowerPAK® 1212-8 Dual

Drain to Source Voltage (Vdss) :

20V

Max Power Dissipation :

1.3W

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 4.5V

ECCN Code :

EAR99

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Type :

2 P-Channel (Dual)

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant