SI7942DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Pbfree Code :

yes

Weight :

506.605978mg

Width :

5.89mm

Transistor Application :

SWITCHING

Pin Count :

8

Max Power Dissipation :

1.4W

Case Connection :

DRAIN

Turn On Delay Time :

15 ns

Drain to Source Voltage (Vdss) :

100V

FET Feature :

Logic Level Gate

Number of Terminations :

6

Terminal Form :

C BEND

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.049Ohm

Published :

2015

Mount :

Surface Mount

Height :

1.04mm

Time@Peak Reflow Temperature-Max (s) :

40

DS Breakdown Voltage-Min :

100V

Turn-Off Delay Time :

35 ns

Operating Mode :

ENHANCEMENT MODE

Length :

4.9mm

Rds On (Max) @ Id, Vgs :

49m Ω @ 5.9A, 10V

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

15ns

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Peak Reflow Temperature (Cel) :

260

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks

ECCN Code :

EAR99

Fall Time (Typ) :

15 ns

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

1.4W

Element Configuration :

Dual

Continuous Drain Current (ID) :

3.8A

JESD-30 Code :

R-XDSO-C6

Number of Elements :

2

Package / Case :

PowerPAK® SO-8 Dual

Base Part Number :

SI7942