SI7942DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Dual Supply Voltage :

100V

Time@Peak Reflow Temperature-Max (s) :

40

Nominal Vgs :

4 V

Width :

5.89mm

Pin Count :

8

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

49m Ω @ 5.9A, 10V

Base Part Number :

SI7942

Drain to Source Breakdown Voltage :

100V

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Case Connection :

DRAIN

JESD-30 Code :

R-XDSO-C6

Height :

1.04mm

Pbfree Code :

yes

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

C BEND

Resistance :

49mOhm

Number of Channels :

2

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

35 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Number of Terminations :

6

REACH SVHC :

Unknown

Number of Elements :

2

Number of Pins :

8

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

5.9A

Power Dissipation :

1.4W

Length :

4.9mm

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

20 ns

Rise Time :

15ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

260

Published :

2015

Turn On Delay Time :

15 ns

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Terminal Finish :

Matte Tin (Sn)

FET Feature :

Logic Level Gate

Termination :

SMD/SMT

ECCN Code :

EAR99

Weight :

506.605978mg

FET Type :

2 N-Channel (Dual)

Max Power Dissipation :

1.4W

Package / Case :

PowerPAK® SO-8 Dual

Current - Continuous Drain (Id) @ 25°C :

3.8A

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE