SI7942DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

49m Ω @ 5.9A, 10V

Transistor Application :

SWITCHING

JESD-30 Code :

R-XDSO-C6

Current - Continuous Drain (Id) @ 25°C :

3.8A

Max Power Dissipation :

1.4W

Continuous Drain Current (ID) :

5.9A

JESD-609 Code :

e3

Termination :

SMD/SMT

Case Connection :

DRAIN

Factory Lead Time :

14 Weeks

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Nominal Vgs :

4 V

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

35 ns

REACH SVHC :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Length :

4.9mm

Package / Case :

PowerPAK® SO-8 Dual

Turn On Delay Time :

15 ns

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Dual Supply Voltage :

100V

Resistance :

49mOhm

Number of Channels :

2

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

15ns

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

ECCN Code :

EAR99

Fall Time (Typ) :

20 ns

Element Configuration :

Dual

Weight :

506.605978mg

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

C BEND

Published :

2015

FET Type :

2 N-Channel (Dual)

Base Part Number :

SI7942

Vgs(th) (Max) @ Id :

4V @ 250µA

Pin Count :

8

Mounting Type :

Surface Mount

Mount :

Surface Mount

Width :

5.89mm

Power Dissipation :

1.4W

Series :

TrenchFET®

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

100V

Height :

1.04mm