SI7938DP-T1-GE3

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Mfr.Part #
SI7938DP-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8 Dual
Datasheet
Download
Description
MOSFET 2N-CH 40V 60A PPAK SO-8
Stock
209,527
In Stock :
209,527

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Arrays
Published :
2014
FET Type :
2 N-Channel (Dual)
Height :
1.17mm
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Drain to Source Voltage (Vdss) :
40V
Gate to Source Voltage (Vgs) :
20V
Weight :
506.605978mg
JESD-30 Code :
R-XDSO-C6
Series :
TrenchFET®
Number of Terminations :
6
Max Power Dissipation :
46W
Nominal Vgs :
2.5 V
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Form :
C BEND
Number of Channels :
2
Mounting Type :
Surface Mount
Power Dissipation :
3.5W
Case Connection :
DRAIN
ECCN Code :
EAR99
Drain to Source Breakdown Voltage :
40V
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Number of Elements :
2
Operating Mode :
ENHANCEMENT MODE
Threshold Voltage :
2.5V
Fall Time (Typ) :
15 ns
Rise Time :
19ns
Turn On Delay Time :
11 ns
Factory Lead Time :
14 Weeks
FET Feature :
Standard
Input Capacitance (Ciss) (Max) @ Vds :
2300pF @ 20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Pins :
8
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
60A
Pbfree Code :
yes
Qualification Status :
Not Qualified
Manufacturer Package Identifier :
S17-0173-DUAL
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Package / Case :
PowerPAK® SO-8 Dual
Max Junction Temperature (Tj) :
150°C
Terminal Finish :
Matte Tin (Sn)
Operating Temperature :
-55°C~150°C TJ
Lead Free :
Lead Free
Gate Charge (Qg) (Max) @ Vgs :
65nC @ 10V
Pin Count :
8
Rds On (Max) @ Id, Vgs :
5.8m Ω @ 18.5A, 10V
Turn-Off Delay Time :
33 ns
Reach Compliance Code :
Unknown
REACH SVHC :
No SVHC
Element Configuration :
Dual
Base Part Number :
SI7938
Datasheets
SI7938DP-T1-GE3
Introducing Transistors - FETs, MOSFETs - Arrays Vishay SI7938DP-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Number of Channels:2, Mounting Type:Surface Mount, Number of Pins:8, Package / Case:PowerPAK® SO-8 Dual, Operating Temperature:-55°C~150°C TJ, Base Part Number:SI7938, SI7938DP-T1-GE3 pinout, SI7938DP-T1-GE3 datasheet PDF, SI7938DP-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Arrays Vishay SI7938DP-T1-GE3 ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7938DP-T1-GE3


SI7938DP-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at

SI7938DP-T1-GE3 Description


The SI7938DP-T1-GE3 is a Dual N-Channel 40 V (D-S) MOSFET. A form of field-effect transistor (FET) called a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device's conductivity. Electronic signals can be switched or amplified using this material's capacity to change conductivity in response to the amount of applied voltage. Nearly the same thing as a MOSFET is a metal-insulator-semiconductor field-effect transistor (MISFET). IGFET, or insulated-gate field-effect transistor, is another equivalent term.



SI7938DP-T1-GE3 Features


  • TrenchFET® power MOSFET

  • 100 % Rg and UIS tested

  • High current: The same tendency as for low ON resistance.

  • High Speed: U-MOS is disadvantageous for high-speed switching because of large gate capacity (Ciss).

  • Withstand voltage: The optimum structure is selected for the target withstand voltage.

  • Low On-Resistance: U-MOS for products with 250 V or less, SJ-MOS (or DTMOS) are advantageous for products with more than that.



SI7938DP-T1-GE3 Applications


  • POL

  • DC/DC

  • Automotive

  • Industrial

  • Communications systems


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