SI7938DP-T1-GE3
- Mfr.Part #
- SI7938DP-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8 Dual
- Datasheet
- Download
- Description
- MOSFET 2N-CH 40V 60A PPAK SO-8
- Stock
- 209,527
- In Stock :
- 209,527
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Published :
- 2014
- FET Type :
- 2 N-Channel (Dual)
- Height :
- 1.17mm
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 40V
- Gate to Source Voltage (Vgs) :
- 20V
- Weight :
- 506.605978mg
- JESD-30 Code :
- R-XDSO-C6
- Series :
- TrenchFET®
- Number of Terminations :
- 6
- Max Power Dissipation :
- 46W
- Nominal Vgs :
- 2.5 V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- C BEND
- Number of Channels :
- 2
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 3.5W
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 40V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Number of Elements :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- 2.5V
- Fall Time (Typ) :
- 15 ns
- Rise Time :
- 19ns
- Turn On Delay Time :
- 11 ns
- Factory Lead Time :
- 14 Weeks
- FET Feature :
- Standard
- Input Capacitance (Ciss) (Max) @ Vds :
- 2300pF @ 20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Pins :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 60A
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Manufacturer Package Identifier :
- S17-0173-DUAL
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Package / Case :
- PowerPAK® SO-8 Dual
- Max Junction Temperature (Tj) :
- 150°C
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Pin Count :
- 8
- Rds On (Max) @ Id, Vgs :
- 5.8m Ω @ 18.5A, 10V
- Turn-Off Delay Time :
- 33 ns
- Reach Compliance Code :
- Unknown
- REACH SVHC :
- No SVHC
- Element Configuration :
- Dual
- Base Part Number :
- SI7938
- Datasheets
- SI7938DP-T1-GE3
SI7938DP-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at
SI7938DP-T1-GE3 Description
The SI7938DP-T1-GE3 is a Dual N-Channel 40 V (D-S) MOSFET. A form of field-effect transistor (FET) called a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device's conductivity. Electronic signals can be switched or amplified using this material's capacity to change conductivity in response to the amount of applied voltage. Nearly the same thing as a MOSFET is a metal-insulator-semiconductor field-effect transistor (MISFET). IGFET, or insulated-gate field-effect transistor, is another equivalent term.
SI7938DP-T1-GE3 Features
-
TrenchFET® power MOSFET
-
100 % Rg and UIS tested
-
High current: The same tendency as for low ON resistance.
-
High Speed: U-MOS is disadvantageous for high-speed switching because of large gate capacity (Ciss).
-
Withstand voltage: The optimum structure is selected for the target withstand voltage.
-
Low On-Resistance: U-MOS for products with 250 V or less, SJ-MOS (or DTMOS) are advantageous for products with more than that.
SI7938DP-T1-GE3 Applications
-
POL
-
DC/DC
-
Automotive
-
Industrial
-
Communications systems
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