SI7923DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

14 Weeks

Mounting Type :

Surface Mount

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

-30V

FET Feature :

Logic Level Gate

Height :

1.04mm

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Dual

Radiation Hardening :

No

Transistor Element Material :

SILICON

Package / Case :

PowerPAK® 1212-8 Dual

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

-6.4A

Turn-Off Delay Time :

38 ns

Case Connection :

DRAIN

Series :

TrenchFET®

Length :

3.05mm

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Power Dissipation :

1.3W

Number of Elements :

2

Resistance :

47mOhm

Time@Peak Reflow Temperature-Max (s) :

40

FET Technology :

METAL-OXIDE SEMICONDUCTOR

REACH SVHC :

Unknown

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

S-XDSO-C6

Drain to Source Voltage (Vdss) :

30V

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

4.3A

Number of Pins :

8

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Rise Time :

12ns

Pbfree Code :

yes

Turn On Delay Time :

10 ns

Lead Free :

Lead Free

Fall Time (Typ) :

12 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

4.3A

JESD-609 Code :

e3

Terminal Form :

C BEND

Base Part Number :

SI7923

Rds On (Max) @ Id, Vgs :

47m Ω @ 6.4A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

-3V

Width :

3.05mm

Max Power Dissipation :

1.3W