SI7923DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

-6.4A

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

JESD-30 Code :

S-XDSO-C6

Lead Free :

Lead Free

Height :

1.04mm

Pbfree Code :

yes

FET Type :

2 P-Channel (Dual)

Number of Pins :

8

Series :

TrenchFET®

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

C BEND

Rds On (Max) @ Id, Vgs :

47m Ω @ 6.4A, 10V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

4.3A

Length :

3.05mm

FET Feature :

Logic Level Gate

Max Power Dissipation :

1.3W

ECCN Code :

EAR99

Power Dissipation :

1.3W

Vgs(th) (Max) @ Id :

3V @ 250µA

Rise Time :

12ns

Number of Terminations :

6

Case Connection :

DRAIN

Width :

3.05mm

Turn-Off Delay Time :

38 ns

Fall Time (Typ) :

12 ns

Mounting Type :

Surface Mount

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

4.3A

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Package / Case :

PowerPAK® 1212-8 Dual

Packaging :

Tape and Reel (TR)

REACH SVHC :

Unknown

Factory Lead Time :

14 Weeks

Base Part Number :

SI7923

Number of Elements :

2

Drain to Source Voltage (Vdss) :

30V

Drain to Source Breakdown Voltage :

-30V

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Dual

Turn On Delay Time :

10 ns

Threshold Voltage :

-3V

Resistance :

47mOhm

JESD-609 Code :

e3