SI7922DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Turn-Off Delay Time :

8 ns

Pulsed Drain Current-Max (IDM) :

10A

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

100V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

REACH SVHC :

Unknown

Fall Time (Typ) :

11 ns

Rds On (Max) @ Id, Vgs :

195m Ω @ 2.5A, 10V

Factory Lead Time :

14 Weeks

Pbfree Code :

yes

Package / Case :

PowerPAK® 1212-8 Dual

Width :

3.05mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

7 ns

Transistor Application :

SWITCHING

Terminal Form :

C BEND

Resistance :

195mOhm

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

1.8A

Rise Time :

11ns

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Number of Pins :

8

Radiation Hardening :

No

JESD-30 Code :

S-XDSO-C6

Number of Terminations :

6

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual)

Height :

1.04mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

25A

Max Power Dissipation :

1.3W

Number of Elements :

2

Length :

3.05mm

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

3.5 V

Number of Channels :

2

JESD-609 Code :

e3

Base Part Number :

SI7922

Published :

2009

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

2.6W

Series :

TrenchFET®

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Threshold Voltage :

3.5V