SI4816BDY-T1-E3

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Mfr.Part #
SI4816BDY-T1-E3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET 2N-CH 30V 5.8A 8-SOIC
Stock
39,137
In Stock :
39,137

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Arrays
Time@Peak Reflow Temperature-Max (s) :
40
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
Series :
LITTLE FOOT®
Nominal Vgs :
3 V
Factory Lead Time :
14 Weeks
REACH SVHC :
Unknown
Current - Continuous Drain (Id) @ 25°C :
5.8A 8.2A
Terminal Form :
Gull wing
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Dual
Base Part Number :
SI4816
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Height :
1.75mm
Terminal Finish :
MATTE TIN
Weight :
186.993455mg
DS Breakdown Voltage-Min :
30V
Published :
2005
Number of Elements :
2
Length :
5mm
Number of Pins :
8
Number of Terminations :
8
Threshold Voltage :
1V
Turn On Delay Time :
13 ns
Number of Channels :
2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
1W 1.25W
Fall Time (Typ) :
9 ns
Drain to Source Voltage (Vdss) :
30V
Max Power Dissipation :
1.25W
Rise Time :
9ns
FET Feature :
Logic Level Gate
Element Configuration :
Single
Pin Count :
8
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Resistance :
18.5mOhm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) :
150°C
JESD-609 Code :
e3
FET Type :
2 N-Channel (Half Bridge)
Operating Temperature :
-55°C~150°C TJ
Lead Free :
Lead Free
Rds On (Max) @ Id, Vgs :
18.5m Ω @ 6.8A, 10V
Gate to Source Voltage (Vgs) :
20V
Vgs(th) (Max) @ Id :
3V @ 250µA
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 5V
Mount :
Surface Mount
Packaging :
Tape and Reel (TR)
Turn-Off Delay Time :
31 ns
Width :
4mm
Continuous Drain Current (ID) :
5.8A
Datasheets
SI4816BDY-T1-E3
Introducing Transistors - FETs, MOSFETs - Arrays Vishay SI4816BDY-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:SI4816, Number of Pins:8, Number of Terminations:8, Number of Channels:2, Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, SI4816BDY-T1-E3 pinout, SI4816BDY-T1-E3 datasheet PDF, SI4816BDY-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Arrays Vishay SI4816BDY-T1-E3 ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4816BDY-T1-E3


SI4816BDY-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at

SI4816BDY-T1-E3                                   Description

The MOSFET is the most common type of transistor today. Their primary use is to control conductivity, or how much electricity can flow, between its source and drain terminals based on the amount of voltage applied to its gate terminal.

                         

SI4816BDY-T1-E3                                  Applications

 RF front end wideband applications in the GHz range

 Analog and digital cellular telephones

 Cordless telephones (CT1, CT2, DECT, etc.)

 Radar detectors

 Satellite TV tuners (SATV)

 MATV/CATV amplifiers

SI4816BDY-T1-E3                                 FEATURES

 • Halogen-free According to IEC 61249-2-21 Available

 • LITTLE FOOT® Plus Power MOSFET

 • 100 % Rg Tested


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