SI4816BDY-T1-E3
- Mfr.Part #
- SI4816BDY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 5.8A 8-SOIC
- Stock
- 39,137
- In Stock :
- 39,137
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Series :
- LITTLE FOOT®
- Nominal Vgs :
- 3 V
- Factory Lead Time :
- 14 Weeks
- REACH SVHC :
- Unknown
- Current - Continuous Drain (Id) @ 25°C :
- 5.8A 8.2A
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Dual
- Base Part Number :
- SI4816
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Height :
- 1.75mm
- Terminal Finish :
- MATTE TIN
- Weight :
- 186.993455mg
- DS Breakdown Voltage-Min :
- 30V
- Published :
- 2005
- Number of Elements :
- 2
- Length :
- 5mm
- Number of Pins :
- 8
- Number of Terminations :
- 8
- Threshold Voltage :
- 1V
- Turn On Delay Time :
- 13 ns
- Number of Channels :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 1W 1.25W
- Fall Time (Typ) :
- 9 ns
- Drain to Source Voltage (Vdss) :
- 30V
- Max Power Dissipation :
- 1.25W
- Rise Time :
- 9ns
- FET Feature :
- Logic Level Gate
- Element Configuration :
- Single
- Pin Count :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Resistance :
- 18.5mOhm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Max Junction Temperature (Tj) :
- 150°C
- JESD-609 Code :
- e3
- FET Type :
- 2 N-Channel (Half Bridge)
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 18.5m Ω @ 6.8A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 5V
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 31 ns
- Width :
- 4mm
- Continuous Drain Current (ID) :
- 5.8A
- Datasheets
- SI4816BDY-T1-E3

SI4816BDY-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at
SI4816BDY-T1-E3 Description
The MOSFET is the most common type of transistor today. Their primary use is to control conductivity, or how much electricity can flow, between its source and drain terminals based on the amount of voltage applied to its gate terminal.
SI4816BDY-T1-E3 Applications
RF front end wideband applications in the GHz range
Analog and digital cellular telephones
Cordless telephones (CT1, CT2, DECT, etc.)
Radar detectors
Satellite TV tuners (SATV)
MATV/CATV amplifiers
SI4816BDY-T1-E3 FEATURES
• Halogen-free According to IEC 61249-2-21 Available
• LITTLE FOOT® Plus Power MOSFET
• 100 % Rg Tested
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