SI4804BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

5.7A

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

30V

Weight :

186.993455mg

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

30V

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

10ns

Mounting Type :

Surface Mount

Element Configuration :

Dual

Number of Channels :

2

Published :

2012

JESD-609 Code :

e3

Number of Terminations :

8

Radiation Hardening :

No

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

9 ns

Max Power Dissipation :

1.1W

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Turn-Off Delay Time :

19 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

8

FET Type :

2 N-Channel (Dual)

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Base Part Number :

SI4804

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3V @ 250µA

Fall Time (Typ) :

9 ns

Rds On (Max) @ Id, Vgs :

22m Ω @ 7.5A, 10V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

PURE MATTE TIN

Packaging :

Tape and Reel (TR)