SI4800BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Mounting Type :

Surface Mount

Weight :

186.993455mg

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

7 ns

FET Type :

N-Channel

Length :

5mm

Power Dissipation-Max :

1.3W Ta

Element Configuration :

Single

Radiation Hardening :

No

Power Dissipation :

1.3W

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

ECCN Code :

EAR99

Vgs (Max) :

±25V

Resistance :

18.5mOhm

Factory Lead Time :

14 Weeks

Drain Current-Max (Abs) (ID) :

6.5A

Rds On (Max) @ Id, Vgs :

18.5m Ω @ 9A, 10V

Gate to Source Voltage (Vgs) :

25V

Number of Terminations :

8

Transistor Application :

SWITCHING

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Nominal Vgs :

25 V

Continuous Drain Current (ID) :

9A

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

Terminal Form :

Gull wing

Terminal Position :

Dual

Terminal Finish :

MATTE TIN

Fall Time (Typ) :

12 ns

Published :

2012

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

32 ns

Width :

4mm

Series :

TrenchFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

1.55mm

Vgs(th) (Max) @ Id :

1.8V @ 250μA

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

30V

Rise Time :

12ns

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

8