SI4800BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Application :

SWITCHING

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Qualification Status :

Not Qualified

Surface Mount :

yes

DS Breakdown Voltage-Min :

30V

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

6.5A

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

9A

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Published :

2004

Terminal Form :

Gull wing

Factory Lead Time :

14 Weeks

Rds On (Max) @ Id, Vgs :

18.5m Ω @ 9A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Vgs (Max) :

±25V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Power Dissipation-Max :

1.3W Ta

Vgs(th) (Max) @ Id :

1.8V @ 250μA

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

8

Transistor Element Material :

SILICON

Number of Pins :

8

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

8

JESD-609 Code :

e3