SI4800BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

18.5m Ω @ 9A, 10V

Vgs (Max) :

±25V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Terminal Form :

Gull wing

Factory Lead Time :

14 Weeks

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Number of Terminations :

8

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Continuous Drain Current (ID) :

9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

6.5A

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Number of Pins :

8

FET Type :

N-Channel

Power Dissipation-Max :

1.3W Ta

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Published :

2004

Pin Count :

8

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

DS Breakdown Voltage-Min :

30V