SI4800BDY-T1-E3

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Mfr.Part #
SI4800BDY-T1-E3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 6.5A 8SO
Stock
290,477
In Stock :
290,477

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
18.5m Ω @ 9A, 10V
Vgs (Max) :
±25V
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 5V
Peak Reflow Temperature (Cel) :
260
Terminal Position :
Dual
Terminal Form :
Gull wing
Factory Lead Time :
14 Weeks
Current - Continuous Drain (Id) @ 25°C :
6.5A Ta
RoHS Status :
ROHS3 Compliant
Series :
TrenchFET®
Number of Terminations :
8
Vgs(th) (Max) @ Id :
1.8V @ 250μA
Continuous Drain Current (ID) :
9A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Drain to Source Voltage (Vdss) :
30V
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Elements :
1
Drain Current-Max (Abs) (ID) :
6.5A
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
yes
Number of Pins :
8
FET Type :
N-Channel
Power Dissipation-Max :
1.3W Ta
Qualification Status :
Not Qualified
Operating Mode :
ENHANCEMENT MODE
Published :
2004
Pin Count :
8
Packaging :
Tape and Reel (TR)
Time@Peak Reflow Temperature-Max (s) :
30
Transistor Application :
SWITCHING
Terminal Finish :
MATTE TIN
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
ECCN Code :
EAR99
Package / Case :
8-SOIC (0.154, 3.90mm Width)
DS Breakdown Voltage-Min :
30V
Datasheets
SI4800BDY-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI4800BDY-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), SI4800BDY-T1-E3 pinout, SI4800BDY-T1-E3 datasheet PDF, SI4800BDY-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI4800BDY-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4800BDY-T1-E3


N-Channel Tape & Reel (TR) 18.5m Ω @ 9A, 10V ±25V 13nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)

SI4800BDY-T1-E3 Overview


Its continuous drain current is 9A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 6.5A, and it is the maximum continuous current the device can conduct.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

SI4800BDY-T1-E3 Features


a continuous drain current (ID) of 9A
a 30V drain to source voltage (Vdss)


SI4800BDY-T1-E3 Applications


There are a lot of Vishay Siliconix
SI4800BDY-T1-E3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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