SI4800BDY-T1-E3

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Mfr.Part #
SI4800BDY-T1-E3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 6.5A 8SO
Stock
290,477
In Stock :
290,477

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
JESD-609 Code :
e3
Number of Terminations :
8
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 5V
Series :
TrenchFET®
Surface Mount :
yes
Drain Current-Max (Abs) (ID) :
6.5A
Current - Continuous Drain (Id) @ 25°C :
6.5A Ta
Transistor Element Material :
SILICON
Drain to Source Voltage (Vdss) :
30V
Published :
2004
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
8
Rds On (Max) @ Id, Vgs :
18.5m Ω @ 9A, 10V
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Factory Lead Time :
14 Weeks
Qualification Status :
Not Qualified
Vgs (Max) :
±25V
Terminal Form :
Gull wing
Pin Count :
8
Transistor Application :
SWITCHING
Configuration :
SINGLE WITH BUILT-IN DIODE
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Terminal Position :
Dual
Time@Peak Reflow Temperature-Max (s) :
30
Vgs(th) (Max) @ Id :
1.8V @ 250μA
Peak Reflow Temperature (Cel) :
260
Terminal Finish :
MATTE TIN
Power Dissipation-Max :
1.3W Ta
Packaging :
Tape and Reel (TR)
DS Breakdown Voltage-Min :
30V
Continuous Drain Current (ID) :
9A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Mounting Type :
Surface Mount
Datasheets
SI4800BDY-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI4800BDY-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), Mounting Type:Surface Mount, SI4800BDY-T1-E3 pinout, SI4800BDY-T1-E3 datasheet PDF, SI4800BDY-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI4800BDY-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4800BDY-T1-E3


N-Channel Tape & Reel (TR) 18.5m Ω @ 9A, 10V ±25V 13nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)

SI4800BDY-T1-E3 Overview


Its continuous drain current is 9A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 6.5A, and it is the maximum continuous current the device can conduct.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

SI4800BDY-T1-E3 Features


a continuous drain current (ID) of 9A
a 30V drain to source voltage (Vdss)


SI4800BDY-T1-E3 Applications


There are a lot of Vishay Siliconix
SI4800BDY-T1-E3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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