SI4808DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

22m Ω @ 7.5A, 10V

Vgs(th) (Max) @ Id :

800mV @ 250µA (Min)

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Number of Channels :

2

Max Power Dissipation :

1.1W

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Rise Time :

10ns

Turn-Off Delay Time :

21 ns

Factory Lead Time :

13 Weeks

Continuous Drain Current (ID) :

5.7A

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Mount :

Surface Mount

Width :

4mm

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

30V

Pin Count :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

1.55mm

Turn On Delay Time :

8 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation :

2W

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Fall Time (Typ) :

10 ns

JESD-609 Code :

e3

Series :

LITTLE FOOT®

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

Terminal Finish :

Matte Tin (Sn)

Length :

5mm

Number of Elements :

2

FET Type :

2 N-Channel (Dual)

Published :

2005

Weight :

506.605978mg

Mounting Type :

Surface Mount

Pbfree Code :

yes

Number of Pins :

8

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

30V