SI4812BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

8

Turn-Off Delay Time :

20 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Factory Lead Time :

13 Weeks

Number of Channels :

1

Continuous Drain Current (ID) :

7.3A

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Terminal Form :

Gull wing

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

LITTLE FOOT®

Weight :

186.993455mg

DS Breakdown Voltage-Min :

30V

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Threshold Voltage :

1V

Vgs (Max) :

±20V

ECCN Code :

EAR99

Fall Time (Typ) :

8 ns

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

7.3A Ta

Power Dissipation :

1.4W

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.4W Ta

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Transistor Element Material :

SILICON

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

20V

Rise Time :

13ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

16m Ω @ 9.5A, 10V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Turn On Delay Time :

15 ns

JESD-609 Code :

e3

Published :

2015

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

8