SI4804CDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Rds On (Max) @ Id, Vgs :

22m Ω @ 7.5A, 10V

Continuous Drain Current (ID) :

7.1A

FET Type :

2 N-Channel (Dual)

Mount :

Surface Mount

DS Breakdown Voltage-Min :

30V

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

8A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Fall Time (Typ) :

9 ns

Transistor Element Material :

SILICON

Pin Count :

8

ECCN Code :

EAR99

Published :

2009

JESD-609 Code :

e3

Number of Terminations :

8

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

8A

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

17 ns

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

865pF @ 15V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

19 ns

Operating Mode :

ENHANCEMENT MODE

Rise Time :

13ns

Base Part Number :

SI4804

Number of Elements :

2

Max Power Dissipation :

3.1W

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

30

FET Feature :

Standard