SI4804CDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

14 Weeks

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

30V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

19 ns

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Published :

2009

FET Type :

2 N-Channel (Dual)

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

865pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

13ns

Max Power Dissipation :

3.1W

Number of Elements :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

8A

Power Dissipation :

2W

Number of Terminations :

8

Fall Time (Typ) :

9 ns

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

17 ns

Pin Count :

8

ECCN Code :

EAR99

Base Part Number :

SI4804

Series :

TrenchFET®

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Transistor Application :

SWITCHING

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Standard

Drain Current-Max (Abs) (ID) :

8A

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

22m Ω @ 7.5A, 10V

Continuous Drain Current (ID) :

7.1A