SI4804CDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Base Part Number :

SI4804

Terminal Finish :

MATTE TIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Published :

2009

Terminal Form :

Gull wing

Turn-Off Delay Time :

19 ns

Input Capacitance (Ciss) (Max) @ Vds :

865pF @ 15V

Turn On Delay Time :

17 ns

Number of Elements :

2

Max Power Dissipation :

3.1W

Radiation Hardening :

No

Fall Time (Typ) :

9 ns

Number of Pins :

8

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

2.4V @ 250μA

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

8A

Rise Time :

13ns

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

8A

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Factory Lead Time :

14 Weeks

Series :

TrenchFET®

Continuous Drain Current (ID) :

7.1A

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2W

Pin Count :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Feature :

Standard

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

22m Ω @ 7.5A, 10V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8