SI4804CDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

865pF @ 15V

ECCN Code :

EAR99

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

30V

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

30V

Continuous Drain Current (ID) :

7.1A

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

8A

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

9 ns

Published :

2009

Number of Terminations :

8

Factory Lead Time :

14 Weeks

Number of Elements :

2

Transistor Application :

SWITCHING

Series :

TrenchFET®

Pin Count :

8

Turn On Delay Time :

17 ns

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Power Dissipation :

2W

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

SI4804

Turn-Off Delay Time :

19 ns

Drain Current-Max (Abs) (ID) :

8A

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Rise Time :

13ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

22m Ω @ 7.5A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Max Power Dissipation :

3.1W

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

FET Feature :

Standard