SI4814BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

10A 10.5A

Turn-Off Delay Time :

27 ns

Voltage - Rated DC :

30V

Gate to Source Voltage (Vgs) :

20V

Power - Max :

3.3W 3.5W

FET Type :

2 N-Channel (Half Bridge)

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Rise Time :

13ns

Fall Time (Typ) :

13 ns

Terminal Position :

Dual

Max Power Dissipation :

3.5W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Height :

1.55mm

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

40A

Series :

LITTLE FOOT®

Operating Temperature :

-55°C~150°C TJ

Pin Count :

8

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Published :

2005

Continuous Drain Current (ID) :

10.5A

JESD-609 Code :

e3

Number of Terminations :

8

Drain Current-Max (Abs) (ID) :

7.5A

Width :

4mm

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

18m Ω @ 10A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

FET Feature :

Logic Level Gate

Weight :

186.993455mg

Turn On Delay Time :

9 ns

Mount :

Surface Mount

Transistor Application :

SWITCHING

Number of Pins :

8

Number of Channels :

2

ECCN Code :

EAR99

Length :

5mm

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Pbfree Code :

yes

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN