SI1967DH-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

14 Weeks

Published :

2010

Rise Time :

27ns

Package / Case :

6-TSSOP, SC-88, SOT-363

Vgs(th) (Max) @ Id :

1V @ 250μA

Pbfree Code :

yes

Pin Count :

6

Fall Time (Typ) :

10 ns

Drain to Source Breakdown Voltage :

-20V

Max Junction Temperature (Tj) :

150°C

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Element Configuration :

Dual

Current - Continuous Drain (Id) @ 25°C :

1.3A

Base Part Number :

SI1967

Turn-Off Delay Time :

12 ns

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Number of Pins :

6

Gate to Source Voltage (Vgs) :

8V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

-1V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 10V

FET Feature :

Logic Level Gate

Power Dissipation :

740mW

Drain Current-Max (Abs) (ID) :

1A

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 8V

FET Type :

2 P-Channel (Dual)

Terminal Form :

Gull wing

Number of Terminations :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

2 ns

Radiation Hardening :

No

ECCN Code :

EAR99

Continuous Drain Current (ID) :

-1A

Height :

1.1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Max Power Dissipation :

1.25W

Rds On (Max) @ Id, Vgs :

490m Ω @ 910mA, 4.5V

Resistance :

490mOhm

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

REACH SVHC :

Unknown

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Number of Elements :

2

Weight :

28.009329mg

Series :

TrenchFET®