SI1967DH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Length :

2mm

Number of Elements :

2

Base Part Number :

SI1967

Number of Pins :

6

Weight :

28.009329mg

Series :

TrenchFET®

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 10V

Drain Current-Max (Abs) (ID) :

1A

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate to Source Voltage (Vgs) :

8V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 8V

Power Dissipation :

740mW

Time@Peak Reflow Temperature-Max (s) :

30

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Terminal Form :

Gull wing

Max Power Dissipation :

1.25W

Radiation Hardening :

No

Rise Time :

27ns

Rds On (Max) @ Id, Vgs :

490m Ω @ 910mA, 4.5V

Published :

2010

Turn-Off Delay Time :

15 ns

Operating Temperature :

-55°C~150°C TJ

Height :

1mm

Drain to Source Voltage (Vdss) :

20V

Width :

1.25mm

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Element Configuration :

Dual

Number of Terminations :

6

Turn On Delay Time :

12 ns

FET Type :

2 P-Channel (Dual)

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Fall Time (Typ) :

27 ns

Package / Case :

6-TSSOP, SC-88, SOT-363

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

1.3A

Drain-source On Resistance-Max :

0.49Ohm

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Mount :

Surface Mount

Factory Lead Time :

14 Weeks

Pbfree Code :

yes