SI1967DH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

1.25W

JESD-609 Code :

e3

FET Feature :

Logic Level Gate

Width :

1.25mm

Rise Time :

27ns

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Mount :

Surface Mount

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

8V

Base Part Number :

SI1967

Number of Pins :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Factory Lead Time :

14 Weeks

Height :

1mm

Pin Count :

6

FET Type :

2 P-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

20V

Drain Current-Max (Abs) (ID) :

1A

Turn On Delay Time :

12 ns

Length :

2mm

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 8V

Rds On (Max) @ Id, Vgs :

490m Ω @ 910mA, 4.5V

Number of Terminations :

6

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Finish :

Matte Tin (Sn)

Published :

2010

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Turn-Off Delay Time :

15 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.49Ohm

Continuous Drain Current (ID) :

1.3A

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 10V

Power Dissipation :

740mW

Weight :

28.009329mg

Series :

TrenchFET®

Fall Time (Typ) :

27 ns

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ