QS8J5TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

5A

JESD-609 Code :

e2

Drain-source On Resistance-Max :

0.039Ohm

Factory Lead Time :

10 Weeks

Number of Elements :

2

Number of Pins :

8

Turn On Delay Time :

9 ns

Mount :

Surface Mount

DS Breakdown Voltage-Min :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 10V

Fall Time (Typ) :

55 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Operating Temperature :

150°C TJ

FET Type :

2 P-Channel (Dual)

Mounting Type :

Surface Mount

Number of Terminations :

8

Max Power Dissipation :

600mW

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Rds On (Max) @ Id, Vgs :

39m Ω @ 5A, 10V

Turn-Off Delay Time :

90 ns

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SMD, Flat Lead

Time@Peak Reflow Temperature-Max (s) :

10

Lead Free :

Lead Free

FET Feature :

Logic Level Gate

Published :

2014

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Transistor Element Material :

SILICON

Radiation Hardening :

No

Continuous Drain Current (ID) :

5A

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Rise Time :

40ns

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

Number of Channels :

2

Terminal Finish :

Tin/Copper (Sn/Cu)

RoHS Status :

ROHS3 Compliant