QS8J5TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 P-Channel (Dual)

Fall Time (Typ) :

55 ns

Radiation Hardening :

No

Published :

2014

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 10V

Terminal Finish :

Tin/Copper (Sn/Cu)

DS Breakdown Voltage-Min :

30V

JESD-609 Code :

e2

Turn On Delay Time :

9 ns

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Package / Case :

8-SMD, Flat Lead

Time@Peak Reflow Temperature-Max (s) :

10

Pin Count :

8

Max Power Dissipation :

600mW

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

5A

Transistor Element Material :

SILICON

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.039Ohm

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

5A

Number of Pins :

8

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Turn-Off Delay Time :

90 ns

Factory Lead Time :

10 Weeks

Rds On (Max) @ Id, Vgs :

39m Ω @ 5A, 10V

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Operating Temperature :

150°C TJ

Number of Channels :

2

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

40ns