QS8J2TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

Number of Channels :

2

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1940pF @ 6V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

10 ns

Drain-source On Resistance-Max :

0.036Ohm

Published :

2015

Mounting Type :

Surface Mount

Pbfree Code :

yes

FET Type :

2 P-Channel (Dual)

Number of Terminations :

8

Max Power Dissipation :

550mW

Vgs(th) (Max) @ Id :

1V @ 1mA

Pin Count :

8

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

4A

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

36m Ω @ 4A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

10V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Element Configuration :

Dual

Drain to Source Voltage (Vdss) :

12V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

-12V

Factory Lead Time :

20 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Turn-Off Delay Time :

300 ns

Package / Case :

8-SMD, Flat Lead

Drain Current-Max (Abs) (ID) :

4A

Fall Time (Typ) :

180 ns

Transistor Application :

SWITCHING

Mount :

Surface Mount

Lead Free :

Lead Free

Rise Time :

60ns

FET Feature :

Logic Level Gate, 1.5V Drive