QS8J2TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Gate to Source Voltage (Vgs) :

10V

Drain Current-Max (Abs) (ID) :

4A

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1940pF @ 6V

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

300 ns

Number of Channels :

2

Transistor Application :

SWITCHING

Rise Time :

60ns

Pin Count :

8

Vgs(th) (Max) @ Id :

1V @ 1mA

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

36m Ω @ 4A, 4.5V

Drain-source On Resistance-Max :

0.036Ohm

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

12V

Number of Pins :

8

Turn On Delay Time :

10 ns

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Mounting Type :

Surface Mount

Element Configuration :

Dual

Drain to Source Breakdown Voltage :

-12V

Published :

2015

Operating Temperature :

150°C TJ

Number of Elements :

2

Factory Lead Time :

20 Weeks

Fall Time (Typ) :

180 ns

Radiation Hardening :

No

FET Type :

2 P-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

550mW

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

4A

FET Feature :

Logic Level Gate, 1.5V Drive

Package / Case :

8-SMD, Flat Lead