QS8J4TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

4A

Drain to Source Breakdown Voltage :

-30V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Lead Free :

Lead Free

Turn-Off Delay Time :

80 ns

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Pin Count :

8

Package / Case :

8-SMD, Flat Lead

RoHS Status :

ROHS3 Compliant

FET Type :

2 P-Channel (Dual)

Max Power Dissipation :

550mW

Factory Lead Time :

20 Weeks

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

8 ns

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Operating Temperature :

150°C TJ

Drain-source On Resistance-Max :

0.056Ohm

Rise Time :

20ns

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e2

Pulsed Drain Current-Max (IDM) :

16A

Number of Channels :

2

Published :

2012

Rds On (Max) @ Id, Vgs :

56m Ω @ 4A, 10V

Transistor Application :

SWITCHING

Number of Elements :

2

Pbfree Code :

yes

Terminal Finish :

Tin/Copper (Sn/Cu)

Continuous Drain Current (ID) :

4A

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 10V

Fall Time (Typ) :

50 ns

Transistor Element Material :

SILICON

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

10