QS8J1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

2450pF @ 6V

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

*J1

FET Type :

2 P-Channel (Dual)

Fall Time (Typ) :

215 ns

ECCN Code :

EAR99

JESD-609 Code :

e2

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

12V

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 4.5V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

10

RoHS Status :

ROHS3 Compliant

Rise Time :

75ns

Vgs(th) (Max) @ Id :

1V @ 1mA

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

390 ns

Lead Free :

Lead Free

Max Power Dissipation :

1.25W

Number of Elements :

2

Gate to Source Voltage (Vgs) :

10V

Published :

2008

Drain-source On Resistance-Max :

0.029Ohm

Factory Lead Time :

52 Weeks

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

29m Ω @ 4.5A, 4.5V

Turn On Delay Time :

12 ns

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Package / Case :

8-SMD, Flat Lead

Number of Pins :

8

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Terminal Finish :

TIN COPPER

Drain to Source Breakdown Voltage :

-12V

Continuous Drain Current (ID) :

4.5A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Power Dissipation :

1.5W

Peak Reflow Temperature (Cel) :

260