QS8J13TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

12V

Number of Terminations :

8

Transistor Application :

SWITCHING

Factory Lead Time :

20 Weeks

Transistor Element Material :

SILICON

Packaging :

Cut Tape (CT)

Published :

2014

Number of Pins :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 P-Channel (Dual)

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

22m Ω @ 5.5A, 4.5V

Max Power Dissipation :

1.25W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

12V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 4.5V

Resistance :

15mOhm

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

1V @ 1mA

RoHS Status :

ROHS3 Compliant

Power - Max :

1.25W

Input Capacitance (Ciss) (Max) @ Vds :

6300pF @ 6V

Mount :

Surface Mount

Continuous Drain Current (ID) :

5.5A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

8-SMD, Flat Lead

Reach Compliance Code :

not_compliant