QS8J13TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

5.5A

Power - Max :

1.25W

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

8-SMD, Flat Lead

Transistor Element Material :

SILICON

Published :

2014

ECCN Code :

EAR99

FET Type :

2 P-Channel (Dual)

Resistance :

15mOhm

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1V @ 1mA

Rds On (Max) @ Id, Vgs :

22m Ω @ 5.5A, 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

12V

Input Capacitance (Ciss) (Max) @ Vds :

6300pF @ 6V

Transistor Application :

SWITCHING

Number of Elements :

2

Number of Terminations :

8

Max Power Dissipation :

1.25W

Packaging :

Cut Tape (CT)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

12V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 4.5V

Number of Pins :

8

Reach Compliance Code :

not_compliant

Factory Lead Time :

20 Weeks

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Mount :

Surface Mount