QS8J11TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

550mW

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

43m Ω @ 3.5A, 4.5V

Factory Lead Time :

10 Weeks

Number of Elements :

2

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

12A

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-F8

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Lead Free :

Lead Free

FET Type :

2 P-Channel (Dual)

Pin Count :

8

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

TIN COPPER

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 6V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.043Ohm

Pbfree Code :

yes

DS Breakdown Voltage-Min :

12V

Packaging :

Cut Tape (CT)

Package / Case :

8-SMD, Flat Lead

Vgs(th) (Max) @ Id :

1V @ 1mA

JESD-609 Code :

e2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

12V

Continuous Drain Current (ID) :

3.5A

ECCN Code :

EAR99

Power - Max :

550mW

Published :

2015

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate, 1.5V Drive

Time@Peak Reflow Temperature-Max (s) :

10