QS8J11TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

43m Ω @ 3.5A, 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e2

Factory Lead Time :

10 Weeks

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Type :

2 P-Channel (Dual)

JESD-30 Code :

R-PDSO-F8

Number of Terminations :

8

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

12V

Power - Max :

550mW

Drain-source On Resistance-Max :

0.043Ohm

Max Power Dissipation :

550mW

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

FET Feature :

Logic Level Gate, 1.5V Drive

Packaging :

Cut Tape (CT)

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

3.5A

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

12A

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 6V

Published :

2015

Vgs(th) (Max) @ Id :

1V @ 1mA

Lead Free :

Lead Free

Number of Elements :

2

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Mount :

Surface Mount

DS Breakdown Voltage-Min :

12V

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Finish :

TIN COPPER

Package / Case :

8-SMD, Flat Lead

ECCN Code :

EAR99