QS8J11TCR
- Mfr.Part #
- QS8J11TCR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- MOSFET 2P-CH 12V 3.5A TSMT8
- Stock
- 1,676
- In Stock :
- 1,676
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Number of Terminations :
- 8
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 550mW
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 43m Ω @ 3.5A, 4.5V
- Factory Lead Time :
- 10 Weeks
- Number of Elements :
- 2
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM) :
- 12A
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- R-PDSO-F8
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 4.5V
- Lead Free :
- Lead Free
- FET Type :
- 2 P-Channel (Dual)
- Pin Count :
- 8
- Operating Temperature :
- 150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- TIN COPPER
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600pF @ 6V
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.043Ohm
- Pbfree Code :
- yes
- DS Breakdown Voltage-Min :
- 12V
- Packaging :
- Cut Tape (CT)
- Package / Case :
- 8-SMD, Flat Lead
- Vgs(th) (Max) @ Id :
- 1V @ 1mA
- JESD-609 Code :
- e2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 12V
- Continuous Drain Current (ID) :
- 3.5A
- ECCN Code :
- EAR99
- Power - Max :
- 550mW
- Published :
- 2015
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- Logic Level Gate, 1.5V Drive
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Datasheets
- QS8J11TCR

QS8J11TCR datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ROHM Semiconductor stock available at
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