NTE2401

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Voltage - Collector Emitter Breakdown (Max) :

30V

Power Dissipation-Max (Abs) :

0.3 W

Configuration :

Single

Collector-Emitter Voltage-Max :

30 V

Frequency - Transition :

450MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

Power - Max :

300mW

Operating Temperature :

150°C (TJ)

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

Polarity/Channel Type :

PNP

Gain :

-

Product Status :

Active

Transistor Type :

PNP

Terminal Form :

Gull wing

Current - Collector (Ic) (Max) :

25mA

Number of Terminals :

3

Number of Elements :

1

Reach Compliance Code :

Unknown

Noise Figure (dB Typ @ f) :

3dB ~ 3.5dB @ 60Hz ~ 149Hz

Package :

Bag

ECCN Code :

EAR99

Supplier Device Package :

SOT-23

JESD-30 Code :

R-PDSO-G3

Transistor Application :

AMPLIFIER

Surface Mount :

yes

Collector Current-Max (IC) :

0.025 A

Terminal Position :

Dual

Series :

-

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

HTS Code :

8541.21.00.75

Package Shape :

RECTANGULAR