IXTP8N50PM
- Mfr.Part #
- IXTP8N50PM
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 4A TO220AB
- Stock
- 36,554
- In Stock :
- 36,554
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- JEDEC-95 Code :
- TO-220AB
- Pulsed Drain Current-Max (IDM) :
- 14 A
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 4A, 10V
- FET Feature :
- --
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- THROUGH-HOLE
- Case Connection :
- Isolated
- Power Dissipation (Max) :
- 41W (Tc)
- Surface Mount :
- No
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Package :
- Tube
- Package Shape :
- RECTANGULAR
- DS Breakdown Voltage-Min :
- 500 V
- Terminal Finish :
- Matte Tin (Sn)
- Drain to Source Breakdown Voltage :
- 500V
- Power Dissipation-Max :
- 41W Tc
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 23 ns
- Manufacturer :
- IXYS Corporation
- Terminal Position :
- Single
- Base Product Number :
- IXTP8
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Drain to Source Voltage (Vdss) :
- 500V
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Polarity/Channel Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain Current-Max (Abs) (ID) :
- 4A
- Element Configuration :
- Single
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 4A
- Drain-source On Resistance-Max :
- 0.8Ohm
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 41W
- Product Status :
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds :
- 1050pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- Series :
- PolarHV™
- Gate to Source Voltage (Vgs) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Number of Elements :
- 1
- Number of Terminals :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tube
- Turn-Off Delay Time :
- 65 ns
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-220-3
- Rise Time :
- 28ns
- Pin Count :
- 3
- Supplier Device Package :
- TO-220AB
- JESD-30 Code :
- R-PSFM-T3
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Datasheets
- IXTP8N50PM

N-Channel Tube 800m Ω @ 4A, 10V ±30V 1050pF @ 25V 20nC @ 10V 500V TO-220-3
IXTP8N50PM Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 400 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1050pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.4A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 65 ns.Peak drain current for this device is 14 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP8N50PM Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 14 A.
a 500V drain to source voltage (Vdss)
IXTP8N50PM Applications
There are a lot of IXYS
IXTP8N50PM applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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