IXTP02N50D

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Mfr.Part #
IXTP02N50D
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 200MA TO220AB
Stock
19,257
In Stock :
19,257

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
Pulsed Drain Current-Max (IDM) :
0.8A
Reach Compliance Code :
Unknown
Case Connection :
DRAIN
Operating Temperature :
-55°C~150°C TJ
Product Category :
MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Series :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
20V
Drain to Source Voltage (Vdss) :
500V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Channel Mode :
Depletion
Product Status :
Active
Width :
4.83 mm
Transistor Application :
SWITCHING
Height :
9.15 mm
Published :
2006
Mounting Type :
Through Hole
JEDEC-95 Code :
TO-220AD
Terminal Finish :
Matte Tin (Sn)
Package / Case :
TO-220-3
Minimum Operating Temperature :
- 55 C
JESD-609 Code :
e3
Configuration :
Single
Continuous Drain Current (ID) :
200mA
FET Type :
N-Channel
Manufacturer :
IXYS
Current - Continuous Drain (Id) @ 25°C :
200mA Tc
Element Configuration :
Single
Transistor Type :
1 N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Mounting Style :
Through Hole
Drain Current-Max (Abs) (ID) :
0.2A
JESD-30 Code :
R-PSFM-T3
Product Type :
MOSFET
RoHS :
Details
Qualification Status :
Not Qualified
Power Dissipation :
25W
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
5V @ 25μA
Number of Terminations :
3
Power Dissipation-Max :
1.1W Ta 25W Tc
Pin Count :
3
Mount :
Through Hole
Pbfree Code :
yes
Transistor Element Material :
SILICON
Supplier Device Package :
TO-220AB
Number of Channels :
1 Channel
Rds On (Max) @ Id, Vgs :
30 Ω @ 50mA, 0V
Package :
Tube
Maximum Operating Temperature :
+ 150 C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
28 ns
Subcategory :
MOSFETs
HTS Code :
8541.29.00.95
Base Product Number :
IXTP02
Drain to Source Breakdown Voltage :
500V
Length :
10.66 mm
Vgs (Max) :
±20V
Number of Elements :
1
FET Feature :
Depletion Mode
Transistor Polarity :
N-Channel
Brand :
IXYS
Packaging :
Tube
Rise Time :
4 ns
Factory Lead Time :
24 Weeks
Datasheets
IXTP02N50D
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP02N50D from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Terminations:3, Number of Channels:1 Channel, IXTP02N50D pinout, IXTP02N50D datasheet PDF, IXTP02N50D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP02N50D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP02N50D


N-Channel Tube 30 Ω @ 50mA, 0V ±20V 120pF @ 25V 500V TO-220-3

IXTP02N50D Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 120pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 200mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 28 ns.Peak drain current is 0.8A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTP02N50D Features


a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.8A.
a 500V drain to source voltage (Vdss)


IXTP02N50D Applications


There are a lot of IXYS
IXTP02N50D applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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