IXTP100N04T2

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Mfr.Part #
IXTP100N04T2
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 40V 100A TO220AB
Stock
8
In Stock :
8

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation (Max) :
150W (Tc)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Additional Feature :
AVALANCHE RATED
Drain to Source Breakdown Voltage :
40V
Drain to Source Voltage (Vdss) :
40V
Mounting Type :
Through Hole
Power Dissipation-Max (Abs) :
150 W
Mount :
Through Hole
Package :
Tube
Turn-Off Delay Time :
15.8 ns
Drain-source On Resistance-Max :
0.007Ohm
Pulsed Drain Current-Max (IDM) :
300A
Continuous Drain Current (ID) :
100A
Height :
9.15 mm
Reach Compliance Code :
Compliant
Manufacturer :
IXYS
Fall Time (Typ) :
6.4 ns
Input Capacitance (Ciss) (Max) @ Vds :
2690pF @ 25V
FET Feature :
--
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DS Breakdown Voltage-Min :
40 V
Packaging :
Tube
FET Type :
N-Channel
JESD-30 Code :
R-PSFM-T3
Vgs(th) (Max) @ Id :
4V @ 250µA
Polarity/Channel Type :
N-Channel
JEDEC-95 Code :
TO-220AB
Transistor Element Material :
SILICON
Transistor Polarity :
N-Channel
Number of Channels :
1 Channel
Operating Mode :
ENHANCEMENT MODE
Published :
2008
Series :
TrenchT2™
Operating Temperature :
-55°C~175°C TJ
ECCN Code :
EAR99
Supplier Device Package :
TO-220AB
Terminal Position :
Single
Product Type :
MOSFET
Element Configuration :
Single
Package Shape :
RECTANGULAR
Qualification Status :
Not Qualified
Surface Mount :
No
Maximum Operating Temperature :
+ 175 C
Case Connection :
DRAIN
Pbfree Code :
yes
Minimum Operating Temperature :
- 55 C
Avalanche Energy Rating (Eas) :
300 mJ
Package / Case :
TO-220-3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation :
150W
Rds On (Max) @ Id, Vgs :
7m Ω @ 25A, 10V
Vgs (Max) :
±20V
Transistor Type :
1 N-Channel
Number of Terminations :
3
RoHS :
Details
Configuration :
Single
Pin Count :
3
Terminal Finish :
Matte Tin (Sn)
Terminal Form :
THROUGH-HOLE
Power Dissipation-Max :
150W Tc
JESD-609 Code :
e3
Channel Mode :
Enhancement
Rise Time :
5.2ns
Drain Current-Max (Abs) (ID) :
100 A
Product Status :
Active
Product Category :
MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminals :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Style :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
25.5nC @ 10V
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Base Product Number :
IXTP100
Brand :
IXYS
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Width :
4.83 mm
Number of Elements :
1
Length :
10.66 mm
Tradename :
HiPerFET
Factory Lead Time :
24 Weeks
Datasheets
IXTP100N04T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP100N04T2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-220-3, Number of Terminations:3, IXTP100N04T2 pinout, IXTP100N04T2 datasheet PDF, IXTP100N04T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP100N04T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP100N04T2


N-Channel Tube 7m Ω @ 25A, 10V ±20V 2690pF @ 25V 25.5nC @ 10V 40V TO-220-3

IXTP100N04T2 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2690pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.A device can conduct a maximum continuous current of [100 A] according to its drain current.It is [15.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 40 V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTP100N04T2 Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 15.8 ns
based on its rated peak drain current 300A.
a 40V drain to source voltage (Vdss)


IXTP100N04T2 Applications


There are a lot of IXYS
IXTP100N04T2 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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