IXTP100N04T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

40V

Transistor Element Material :

SILICON

Minimum Operating Temperature :

- 55 C

RoHS :

Details

Additional Feature :

AVALANCHE RATED

Rise Time :

5.2ns

Number of Terminals :

3

Factory Lead Time :

24 Weeks

Qualification Status :

Not Qualified

Product Type :

MOSFET

Power Dissipation :

150W

FET Feature :

--

Base Product Number :

IXTP100

Transistor Polarity :

N-Channel

Height :

9.15 mm

Supplier Device Package :

TO-220AB

Number of Channels :

1 Channel

Operating Temperature :

-55°C~175°C TJ

Channel Mode :

Enhancement

Pin Count :

3

Published :

2008

Power Dissipation-Max :

150W Tc

Series :

TrenchT2™

Package / Case :

TO-220-3

Brand :

IXYS

Vgs(th) (Max) @ Id :

4V @ 250µA

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

2690pF @ 25V

Transistor Type :

1 N-Channel

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

15.8 ns

Package :

Tube

Product Status :

Active

Maximum Operating Temperature :

+ 175 C

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Terminal Form :

THROUGH-HOLE

Drain-source On Resistance-Max :

0.007Ohm

DS Breakdown Voltage-Min :

40 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

300A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

Single

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

100 A

Number of Elements :

1

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

100A

FET Type :

N-Channel

Width :

4.83 mm

Surface Mount :

No

Drain to Source Voltage (Vdss) :

40V

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Manufacturer :

IXYS

JEDEC-95 Code :

TO-220AB

Power Dissipation (Max) :

150W (Tc)

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Tradename :

HiPerFET

Rds On (Max) @ Id, Vgs :

7m Ω @ 25A, 10V

Power Dissipation-Max (Abs) :

150 W

Packaging :

Tube

Avalanche Energy Rating (Eas) :

300 mJ

Mounting Style :

Through Hole

Reach Compliance Code :

Compliant

Number of Terminations :

3

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Package Shape :

RECTANGULAR

Fall Time (Typ) :

6.4 ns

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

25.5nC @ 10V

Case Connection :

DRAIN

Length :

10.66 mm

Gate to Source Voltage (Vgs) :

20V