IXTP100N04T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

40V

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Width :

4.83 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Manufacturer :

IXYS

Continuous Drain Current (ID) :

100A

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2690pF @ 25V

Factory Lead Time :

24 Weeks

Drain Current-Max (Abs) (ID) :

100 A

Minimum Operating Temperature :

- 55 C

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

7m Ω @ 25A, 10V

Package Shape :

RECTANGULAR

Published :

2008

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-220AB

Maximum Operating Temperature :

+ 175 C

Rise Time :

5.2ns

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

40V

Fall Time (Typ) :

6.4 ns

Series :

TrenchT2™

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Through Hole

Transistor Polarity :

N-Channel

Packaging :

Tube

ECCN Code :

EAR99

Brand :

IXYS

Power Dissipation-Max (Abs) :

150 W

Length :

10.66 mm

Pin Count :

3

DS Breakdown Voltage-Min :

40 V

Product Status :

Active

Transistor Type :

1 N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

300A

Supplier Device Package :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

25.5nC @ 10V

Qualification Status :

Not Qualified

Height :

9.15 mm

Package / Case :

TO-220-3

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.007Ohm

Power Dissipation-Max :

150W Tc

Turn-Off Delay Time :

15.8 ns

Reach Compliance Code :

Compliant

Terminal Form :

THROUGH-HOLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Power Dissipation :

150W

Number of Terminals :

3

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Number of Channels :

1 Channel

Transistor Application :

SWITCHING

Channel Mode :

Enhancement

Gate to Source Voltage (Vgs) :

20V

Package :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Base Product Number :

IXTP100

FET Feature :

--

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±20V

Case Connection :

DRAIN

Product Type :

MOSFET

RoHS :

Details

Product Category :

MOSFET

Avalanche Energy Rating (Eas) :

300 mJ

Tradename :

HiPerFET

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

FET Type :

N-Channel

Mounting Style :

Through Hole

Element Configuration :

Single

Power Dissipation (Max) :

150W (Tc)

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

Single