IXTP100N04T2

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Mfr.Part #
IXTP100N04T2
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 40V 100A TO220AB
Stock
8
In Stock :
8

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Compliant
Rds On (Max) @ Id, Vgs :
7m Ω @ 25A, 10V
Operating Mode :
ENHANCEMENT MODE
Length :
10.66 mm
Product Category :
MOSFET
Mounting Type :
Through Hole
Power Dissipation-Max :
150W Tc
Number of Channels :
1 Channel
Maximum Operating Temperature :
+ 175 C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Style :
Through Hole
Manufacturer :
IXYS
Number of Elements :
1
Number of Terminations :
3
Package / Case :
TO-220-3
JESD-30 Code :
R-PSFM-T3
Power Dissipation (Max) :
150W (Tc)
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminals :
3
Case Connection :
DRAIN
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Additional Feature :
AVALANCHE RATED
Vgs (Max) :
±20V
Element Configuration :
Single
FET Type :
N-Channel
Rise Time :
5.2ns
Terminal Finish :
Matte Tin (Sn)
Base Product Number :
IXTP100
ECCN Code :
EAR99
Tradename :
HiPerFET
Terminal Form :
THROUGH-HOLE
JEDEC-95 Code :
TO-220AB
Channel Mode :
Enhancement
Power Dissipation :
150W
Height :
9.15 mm
Gate to Source Voltage (Vgs) :
20V
Surface Mount :
No
Continuous Drain Current (ID) :
100A
Series :
TrenchT2™
Pin Count :
3
Configuration :
Single
Terminal Position :
Single
Power Dissipation-Max (Abs) :
150 W
Qualification Status :
Not Qualified
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Fall Time (Typ) :
6.4 ns
Supplier Device Package :
TO-220AB
Drain to Source Breakdown Voltage :
40V
FET Feature :
--
Brand :
IXYS
Width :
4.83 mm
Drain to Source Voltage (Vdss) :
40V
Product Type :
MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Polarity :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 250µA
JESD-609 Code :
e3
Packaging :
Tube
Package :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
2690pF @ 25V
Drain-source On Resistance-Max :
0.007Ohm
Current - Continuous Drain (Id) @ 25°C :
100A Tc
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Minimum Operating Temperature :
- 55 C
Product Status :
Active
Gate Charge (Qg) (Max) @ Vgs :
25.5nC @ 10V
Avalanche Energy Rating (Eas) :
300 mJ
Drain Current-Max (Abs) (ID) :
100 A
Published :
2008
DS Breakdown Voltage-Min :
40 V
Factory Lead Time :
24 Weeks
Mount :
Through Hole
Package Shape :
RECTANGULAR
Operating Temperature :
-55°C~175°C TJ
Pulsed Drain Current-Max (IDM) :
300A
Turn-Off Delay Time :
15.8 ns
RoHS :
Details
Transistor Type :
1 N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
IXTP100N04T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP100N04T2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Terminations:3, Package / Case:TO-220-3, Operating Temperature:-55°C~175°C TJ, IXTP100N04T2 pinout, IXTP100N04T2 datasheet PDF, IXTP100N04T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP100N04T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP100N04T2


N-Channel Tube 7m Ω @ 25A, 10V ±20V 2690pF @ 25V 25.5nC @ 10V 40V TO-220-3

IXTP100N04T2 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2690pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.A device can conduct a maximum continuous current of [100 A] according to its drain current.It is [15.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 40 V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTP100N04T2 Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 15.8 ns
based on its rated peak drain current 300A.
a 40V drain to source voltage (Vdss)


IXTP100N04T2 Applications


There are a lot of IXYS
IXTP100N04T2 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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