IXTP100N04T2
- Mfr.Part #
- IXTP100N04T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 100A TO220AB
- Stock
- 8
- In Stock :
- 8
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 25A, 10V
- Product Status :
- Active
- Supplier Device Package :
- TO-220AB
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 25.5nC @ 10V
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max (Abs) :
- 150 W
- Drain Current-Max (Abs) (ID) :
- 100 A
- Qualification Status :
- Not Qualified
- Power Dissipation (Max) :
- 150W (Tc)
- Width :
- 4.83 mm
- Continuous Drain Current (ID) :
- 100A
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Reach Compliance Code :
- Compliant
- Mounting Style :
- Through Hole
- Mount :
- Through Hole
- Package Shape :
- RECTANGULAR
- Height :
- 9.15 mm
- Drain to Source Voltage (Vdss) :
- 40V
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Turn-Off Delay Time :
- 15.8 ns
- Tradename :
- HiPerFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 2690pF @ 25V
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- N-Channel
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Pulsed Drain Current-Max (IDM) :
- 300A
- Drain-source On Resistance-Max :
- 0.007Ohm
- Base Product Number :
- IXTP100
- Transistor Element Material :
- SILICON
- Product Category :
- MOSFET
- Packaging :
- Tube
- Factory Lead Time :
- 24 Weeks
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Product Type :
- MOSFET
- Number of Channels :
- 1 Channel
- Number of Terminations :
- 3
- Number of Terminals :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Terminal Form :
- THROUGH-HOLE
- Series :
- TrenchT2™
- Length :
- 10.66 mm
- Transistor Polarity :
- N-Channel
- Channel Mode :
- Enhancement
- Power Dissipation-Max :
- 150W Tc
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Power Dissipation :
- 150W
- ECCN Code :
- EAR99
- RoHS :
- Details
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- JEDEC-95 Code :
- TO-220AB
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Package / Case :
- TO-220-3
- Rise Time :
- 5.2ns
- Terminal Finish :
- Matte Tin (Sn)
- Manufacturer :
- IXYS
- Surface Mount :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2008
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 40 V
- Fall Time (Typ) :
- 6.4 ns
- Transistor Type :
- 1 N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Brand :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- IXTP100N04T2

N-Channel Tube 7m Ω @ 25A, 10V ±20V 2690pF @ 25V 25.5nC @ 10V 40V TO-220-3
IXTP100N04T2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2690pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.A device can conduct a maximum continuous current of [100 A] according to its drain current.It is [15.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 40 V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTP100N04T2 Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 15.8 ns
based on its rated peak drain current 300A.
a 40V drain to source voltage (Vdss)
IXTP100N04T2 Applications
There are a lot of IXYS
IXTP100N04T2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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