IXTP100N04T2

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Mfr.Part #
IXTP100N04T2
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 40V 100A TO220AB
Stock
8
In Stock :
8

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Avalanche Energy Rating (Eas) :
300 mJ
Number of Terminations :
3
Rds On (Max) @ Id, Vgs :
7m Ω @ 25A, 10V
Power Dissipation-Max :
150W Tc
Power Dissipation-Max (Abs) :
150 W
Operating Temperature :
-55°C~175°C TJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Type :
N-Channel
Pbfree Code :
yes
Product Category :
MOSFET
Element Configuration :
Single
Tradename :
HiPerFET
Transistor Type :
1 N-Channel
Published :
2008
Drain to Source Breakdown Voltage :
40V
RoHS Status :
ROHS3 Compliant
Configuration :
Single
Terminal Finish :
Matte Tin (Sn)
Transistor Polarity :
N-Channel
Transistor Application :
SWITCHING
Length :
10.66 mm
Qualification Status :
Not Qualified
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Feature :
--
Gate to Source Voltage (Vgs) :
20V
Brand :
IXYS
Reach Compliance Code :
Compliant
Drain to Source Voltage (Vdss) :
40V
Package / Case :
TO-220-3
Additional Feature :
AVALANCHE RATED
ECCN Code :
EAR99
Case Connection :
DRAIN
Number of Elements :
1
Fall Time (Typ) :
6.4 ns
Gate Charge (Qg) (Max) @ Vgs :
25.5nC @ 10V
DS Breakdown Voltage-Min :
40 V
Width :
4.83 mm
Rise Time :
5.2ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
2690pF @ 25V
Terminal Form :
THROUGH-HOLE
JEDEC-95 Code :
TO-220AB
Vgs (Max) :
±20V
Number of Channels :
1 Channel
Turn-Off Delay Time :
15.8 ns
Base Product Number :
IXTP100
Drain-source On Resistance-Max :
0.007Ohm
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Type :
MOSFET
Minimum Operating Temperature :
- 55 C
Drain Current-Max (Abs) (ID) :
100 A
Product Status :
Active
Mount :
Through Hole
Mounting Style :
Through Hole
Manufacturer :
IXYS
Series :
TrenchT2™
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Power Dissipation (Max) :
150W (Tc)
Operating Mode :
ENHANCEMENT MODE
Polarity/Channel Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
300A
Maximum Operating Temperature :
+ 175 C
Pin Count :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Factory Lead Time :
24 Weeks
Packaging :
Tube
Supplier Device Package :
TO-220AB
Mounting Type :
Through Hole
Power Dissipation :
150W
JESD-30 Code :
R-PSFM-T3
Channel Mode :
Enhancement
RoHS :
Details
Package :
Tube
Package Shape :
RECTANGULAR
JESD-609 Code :
e3
Continuous Drain Current (ID) :
100A
Height :
9.15 mm
Number of Terminals :
3
Surface Mount :
No
Vgs(th) (Max) @ Id :
4V @ 250µA
Datasheets
IXTP100N04T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP100N04T2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-220-3, Number of Channels:1 Channel, Mounting Type:Through Hole, IXTP100N04T2 pinout, IXTP100N04T2 datasheet PDF, IXTP100N04T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP100N04T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP100N04T2


N-Channel Tube 7m Ω @ 25A, 10V ±20V 2690pF @ 25V 25.5nC @ 10V 40V TO-220-3

IXTP100N04T2 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2690pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.A device can conduct a maximum continuous current of [100 A] according to its drain current.It is [15.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 40 V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTP100N04T2 Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 15.8 ns
based on its rated peak drain current 300A.
a 40V drain to source voltage (Vdss)


IXTP100N04T2 Applications


There are a lot of IXYS
IXTP100N04T2 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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