IXTP100N04T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Tradename :

HiPerFET

Package / Case :

TO-220-3

Product Type :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

2690pF @ 25V

Reach Compliance Code :

Compliant

Drain to Source Voltage (Vdss) :

40V

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

40 V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

100A

Maximum Operating Temperature :

+ 175 C

JESD-609 Code :

e3

Base Product Number :

IXTP100

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Mounting Style :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

100 A

Configuration :

Single

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

150 W

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

THROUGH-HOLE

Factory Lead Time :

24 Weeks

Brand :

IXYS

Vgs (Max) :

±20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR

Published :

2008

Terminal Position :

Single

Turn-Off Delay Time :

15.8 ns

Power Dissipation-Max :

150W Tc

Pulsed Drain Current-Max (IDM) :

300A

Drain-source On Resistance-Max :

0.007Ohm

Width :

4.83 mm

Rise Time :

5.2ns

Package :

Tube

Product Category :

MOSFET

Drain to Source Breakdown Voltage :

40V

Height :

9.15 mm

Number of Terminals :

3

FET Feature :

--

Number of Channels :

1 Channel

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

25.5nC @ 10V

Manufacturer :

IXYS

Fall Time (Typ) :

6.4 ns

Power Dissipation :

150W

Surface Mount :

No

Mount :

Through Hole

Product Status :

Active

Series :

TrenchT2™

Avalanche Energy Rating (Eas) :

300 mJ

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

7m Ω @ 25A, 10V

Channel Mode :

Enhancement

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Element Configuration :

Single

Power Dissipation (Max) :

150W (Tc)

Minimum Operating Temperature :

- 55 C

Length :

10.66 mm

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Supplier Device Package :

TO-220AB

Mounting Type :

Through Hole

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

RoHS :

Details

Transistor Type :

1 N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V