IXTP10N60PM
- Mfr.Part #
- IXTP10N60PM
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5A TO220AB
- Stock
- 6,308
- In Stock :
- 6,308
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- --
- Base Product Number :
- IXTP10
- Product Status :
- Active
- DS Breakdown Voltage-Min :
- 600 V
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 600V
- Voltage - Rated DC :
- 600V
- Continuous Drain Current (ID) :
- 5A
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Manufacturer :
- IXYS Corporation
- Rds On (Max) @ Id, Vgs :
- 740m Ω @ 5A, 10V
- Supplier Device Package :
- TO-220AB
- Power Dissipation-Max :
- 50W Tc
- Published :
- 2006
- Pbfree Code :
- yes
- Series :
- PolarHV™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 30V
- Drain Current-Max (Abs) (ID) :
- 5A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Surface Mount :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn-Off Delay Time :
- 55 ns
- Number of Terminals :
- 3
- Package Shape :
- RECTANGULAR
- Fall Time (Typ) :
- 18 ns
- Reach Compliance Code :
- Compliant
- Power Dissipation :
- 50W
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation (Max) :
- 50W (Tc)
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Additional Feature :
- AVALANCHE RATED
- Current Rating :
- 10A
- Pulsed Drain Current-Max (IDM) :
- 30 A
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 1610pF @ 25V
- Drain-source On Resistance-Max :
- 0.74Ohm
- Packaging :
- Tube
- Element Configuration :
- Single
- Case Connection :
- Isolated
- Terminal Form :
- THROUGH-HOLE
- Polarity/Channel Type :
- N-Channel
- Rise Time :
- 24ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 3
- Package :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Vgs (Max) :
- ±30V
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 600V
- JESD-30 Code :
- R-PSFM-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-220-3
- Datasheets
- IXTP10N60PM

N-Channel Tube 740m Ω @ 5A, 10V ±30V 1610pF @ 25V 32nC @ 10V 600V TO-220-3
IXTP10N60PM Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1610pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 5A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [5A] according to its drain current.It is [55 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 30 A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTP10N60PM Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 30 A.
a 600V drain to source voltage (Vdss)
IXTP10N60PM Applications
There are a lot of IXYS
IXTP10N60PM applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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